Spintronics of semiconductor, metallic, dielectric, and hybrid structures (100th anniversary of the Ioffe Institute)

P.G. Baranov^a, A.M. Kalashnikova^a, V.I. Kozub^a, V.L. Korenev^a, Yu.G. Kusrayev^a, R.V. Pisarev^a, V.F. Sapega^a, I.A. Akimov^a, b, M. Bayer^a, b, A.V. Scherbakov^a, b, D.R. Yakovlev^a, b
^aIoffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
^bExperimentelle Physik II, Universität Dortmund, Otto-Hahn-Straße 4, Dortmund, D-44227, Germany

Demands for miniaturization, increase in operation speed, and energy efficiency of electronic devices have led to the emergence and rapid development of spin electronics, or spintronics. We review several areas in experimental and theoretical studies that have noticeable contributions from Ioffe Institute researchers. We also discuss the progress in developing semiconductor and hybrid structures that exhibit specified magnetic properties, development of methods for manipulating individual spins, theoretical description of switching of metallic heterostructures magnetization by an electric field, and ultrafast control of magnetization by means of manipulating the magnetic anisotropy by femtosecond laser pulses.

Keywords: spin polarization, spin transport, ferromagnetic proximity effect, optically detected magnetic resonance, laser-induced ultrafast magnetization dynamics, single spins, spin reorientation transitions, magnetic anisotropy, diluted magnetic semiconductors, ferromagnets, ferrimagnets
PACS: 75.30.Kz, 75.50.Bb, 75.50.Gg, 75.76.+j, 75.78.Jp, 76.70.Hb, 78.30.Fs, 78.55.Et, 85.75.−d (all)
DOI: 10.3367/UFNe.2018.11.038486
URL: https://ufn.ru/en/articles/2019/8/d/
Web of Science

000504891900003
Scopus

2-s2.0-85074389818
ADS NASA

2019PhyU...62..795B
Citation: Baranov P G, Kalashnikova A M, Kozub V I, Korenev V L, Kusrayev Yu G, Pisarev R V, Sapega V F, Akimov I A, Bayer M, Scherbakov A V, Yakovlev D R "Spintronics of semiconductor, metallic, dielectric, and hybrid structures (100th anniversary of the Ioffe Institute)" Phys. Usp. 62 795–822 (2019)

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Received: 7th, September 2018, revised: 19th, September 2018, accepted: 22nd, November 2018

Оригинал: Баранов П Г, Калашникова А М, Козуб В И, Коренев В Л, Кусраев Ю Г, Писарев Р В, Сапега В Ф, Акимов И А, Байер М, Щербаков А В, Яковлев Д Р «Спинтроника полупроводниковых, металлических, диэлектрических и гибридных структур (к 100-летию Физико-технического института им. А.Ф. Иоффе РАН)» УФН 189 849–880 (2019); DOI: 10.3367/UFNr.2018.11.038486