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On the 100th anniversary of the Ioffe Institute of the Russian Academy of Sciences


Spintronics of semiconductor, metallic, dielectric, and hybrid structures (100th anniversary of the Ioffe Institute)

 a,  a,  a,  a,  a,  a,  a,  a, b,  a, b,  a, b,  a, b
a Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
b Experimentelle Physik II, Universität Dortmund, Otto-Hahn-Straße 4, Dortmund, D-44227, Germany

Demands for miniaturization, increase in operation speed, and energy efficiency of electronic devices have led to the emergence and rapid development of spin electronics, or spintronics. We review several areas in experimental and theoretical studies that have noticeable contributions from Ioffe Institute researchers. We also discuss the progress in developing semiconductor and hybrid structures that exhibit specified magnetic properties, development of methods for manipulating individual spins, theoretical description of switching of metallic heterostructures magnetization by an electric field, and ultrafast control of magnetization by means of manipulating the magnetic anisotropy by femtosecond laser pulses.

Fulltext pdf (2.3 MB)
Fulltext is also available at DOI: 10.3367/UFNe.2018.11.038486
Keywords: spin polarization, spin transport, ferromagnetic proximity effect, optically detected magnetic resonance, laser-induced ultrafast magnetization dynamics, single spins, spin reorientation transitions, magnetic anisotropy, diluted magnetic semiconductors, ferromagnets, ferrimagnets
PACS: 75.30.Kz, 75.50.Bb, 75.50.Gg, 75.76.+j, 75.78.Jp, 76.70.Hb, 78.30.Fs, 78.55.Et, 85.75.−d (all)
DOI: 10.3367/UFNe.2018.11.038486
URL: https://ufn.ru/en/articles/2019/8/d/
000504891900003
2-s2.0-85074389818
2019PhyU...62..795B
Citation: Baranov P G, Kalashnikova A M, Kozub V I, Korenev V L, Kusrayev Yu G, Pisarev R V, Sapega V F, Akimov I A, Bayer M, Scherbakov A V, Yakovlev D R "Spintronics of semiconductor, metallic, dielectric, and hybrid structures (100th anniversary of the Ioffe Institute)" Phys. Usp. 62 795–822 (2019)
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Received: 7th, September 2018, revised: 19th, September 2018, 22nd, November 2018

Оригинал: Баранов П Г, Калашникова А М, Козуб В И, Коренев В Л, Кусраев Ю Г, Писарев Р В, Сапега В Ф, Акимов И А, Байер М, Щербаков А В, Яковлев Д Р «Спинтроника полупроводниковых, металлических, диэлектрических и гибридных структур (к 100-летию Физико-технического института им. А.Ф. Иоффе РАН)» УФН 189 849–880 (2019); DOI: 10.3367/UFNr.2018.11.038486

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  1. Parchinskiy P B, Gazizulina A S et al SPQEO 27 302 (2024)
  2. Antonets I V, Golubev Y A Materials Chemistry And Physics 327 129925 (2024)
  3. Antonets I V, Golubev Y A Journal Of Physics And Chemistry Of Solids 184 111674 (2024)
  4. Lobanov N D, Matveev O V, Morozova M A Izvestiâ Akademii Nauk SSSR. Seriâ Fizičeskaâ 88 288 (2024)
  5. Antonets I V, Golubev Y A, Korolev R I Journal Of Alloys And Compounds 997 174976 (2024)
  6. Lobanov N  D, Matveev O  V, Morozova M  A Bull. Russ. Acad. Sci. Phys. 88 254 (2024)
  7. Kotov L N, Utkin A A et al MMPh 15 85 (2023)
  8. Tarasov A S, Lukyanenko A V et al Bull. Russ. Acad. Sci. Phys. 87 S133 (2023)
  9. Morozova M A, Matveev O V et al 123 (20) (2023)
  10. Morozova M A, Lobanov N D et al Journal Of Magnetism And Magnetic Materials 588 171418 (2023)
  11. Pervishko A A, Yudin D I Uspekhi Fizicheskikh Nauk 192 233 (2022) [Pervishko A A, Yudin D I Phys.-Usp. 65 215 (2022)]
  12. Antonets I V, Golubev Y A, Shcheglov V I Materials Chemistry And Physics 290 126533 (2022)
  13. Ovcharenko S, Gaponov M et al J. Phys. D: Appl. Phys. 55 175001 (2022)
  14. Kotov L N, Lasek M P J. Phys.: Conf. Ser. 2315 012021 (2022)
  15. Kotov L N, Lasek M P et al Bull. Russ. Acad. Sci. Phys. 86 588 (2022)
  16. (PROCEEDINGS OF THE II INTERNATIONAL CONFERENCE ON ADVANCES IN MATERIALS, SYSTEMS AND TECHNOLOGIES: (CAMSTech-II 2021)) Vol. PROCEEDINGS OF THE II INTERNATIONAL CONFERENCE ON ADVANCES IN MATERIALS, SYSTEMS AND TECHNOLOGIES: (CAMSTech-II 2021)Closed and open circuit methods for calculating the conductive and structural characteristics of thin-film elements by the reflection coefficient of microwave wavesIgorAntonetsYevgenyGolubevVladimirShcheglovLeonidKotov2467 (2022) p. 020009
  17. Sergeyev D, Duisenova A, Embergenov Zh J. Phys.: Conf. Ser. 2140 012025 (2021)
  18. Khokhlov N E, Khramova A E et al Journal Of Magnetism And Magnetic Materials 534 168018 (2021)
  19. Ovcharenko S V, Gaponov M S et al Rossijskij Tehnologičeskij žurnal 8 58 (2020)
  20. Eroshenko Yu N Uspekhi Fizicheskikh Nauk 190 542 (2020) [Eroshenko Yu N Phys.-Usp. 63 207 (2020)]
  21. Filatov I A, Gerevenkov P I et al J. Phys.: Conf. Ser. 1697 012193 (2020)
  22. [Eroshenko Yu N Phys.-Usp. 63 521 (2020)]
  23. Khokhlov N E, Gerevenkov P I et al Phys. Rev. Applied 12 (4) (2019)

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