Studies of various experimental groups that explore properties of a two-dimensional electron gas in silicon semiconductor systems ((100)Si-MOSFET and (100) SiGe/Si/SiGe quantum wells) in the vicinity of the metal—insulator transition are described and critically analyzed. Results are identified that are common for all research: (i) the effective mass of electrons measured at the Fermi level in the metallic region increases with decreasing electron density and, if extrapolated, tends to diverge; (ii) the behavior of the energy-averaged mass in the metallic region is quite different in the two systems under study: in Si-MOSFETs, it also exhibits a tendency to diverge, while in the SiGe/Si/SiGe quantum wells, it saturates in the limit of low electron densities; (iii) there is a small number (depending on the sample quality) of localized electrons in the metallic phase; (iv) the properties that the electron system exhibits in the insulating phase, in the vicinity of the metal—insulator transition, are typical for amorphous media with a strong coupling between particles.

Keywords: two-dimensional electron systems, metal—insulator transition, effective mass PACS: 71.27.+a, 71.30.+h, 73.20.−r (all) DOI: 10.3367/UFNe.2018.10.038449 URL: https://ufn.ru/en/articles/2019/7/a/ 000492057500001 2-s2.0-85076758192 2019PhyU...62..633D Citation: Dolgopolov V T "Two-dimensional system of strongly interacting electrons in silicon (100) structures" Phys. Usp. 62 633–648 (2019) BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks Received: 28th, April 2018, revised: 7th, October 2018, accepted: 16th, October 2018 Оригинал: Долгополов В Т «Двумерная система сильновзаимодействующих электронов в кремниевых (100) структурах» УФН 189 673–690 (2019); DOI: 10.3367/UFNr.2018.10.038449