Two-dimensional system of strongly interacting electrons in silicon (100) structures

V.T. Dolgopolov^a, b
^aOsipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
^bEditorial Board of JETP Letters, Moscow, Russian Federation

Studies of various experimental groups that explore properties of a two-dimensional electron gas in silicon semiconductor systems ((100)Si-MOSFET and (100) SiGe/Si/SiGe quantum wells) in the vicinity of the metal—insulator transition are described and critically analyzed. Results are identified that are common for all research: (i) the effective mass of electrons measured at the Fermi level in the metallic region increases with decreasing electron density and, if extrapolated, tends to diverge; (ii) the behavior of the energy-averaged mass in the metallic region is quite different in the two systems under study: in Si-MOSFETs, it also exhibits a tendency to diverge, while in the SiGe/Si/SiGe quantum wells, it saturates in the limit of low electron densities; (iii) there is a small number (depending on the sample quality) of localized electrons in the metallic phase; (iv) the properties that the electron system exhibits in the insulating phase, in the vicinity of the metal—insulator transition, are typical for amorphous media with a strong coupling between particles.

Keywords: two-dimensional electron systems, metal—insulator transition, effective mass
PACS: 71.27.+a, 71.30.+h, 73.20.−r (all)
DOI: 10.3367/UFNe.2018.10.038449
URL: https://ufn.ru/en/articles/2019/7/a/
Web of Science

000492057500001
Scopus

2-s2.0-85076758192
ADS NASA

2019PhyU...62..633D
Citation: Dolgopolov V T "Two-dimensional system of strongly interacting electrons in silicon (100) structures" Phys. Usp. 62 633–648 (2019)

BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Received: 28th, April 2018, revised: 7th, October 2018, accepted: 16th, October 2018

Оригинал: Долгополов В Т «Двумерная система сильновзаимодействующих электронов в кремниевых (100) структурах» УФН 189 673–690 (2019); DOI: 10.3367/UFNr.2018.10.038449

References (92) Cited by (13) Similar articles (20) ↓

A.A. Shashkin “Metal-insulator transitions and the effects of electron-electron interactions in two-dimensional electron systems” 48 129–149 (2005)
V.M. Pudalov “Measurements of the magnetic properties of conduction electrons” 64 3–27 (2021)
V.F. Gantmakher, V.T. Dolgopolov “Superconductor-insulator quantum phase transition” 53 1–49 (2010)
E.Z. Kuchinskii, I.A. Nekrasov, M.V. Sadovskii “Generalized dynamical mean-field theory in the physics of strongly correlated systems” 55 325–355 (2012)
V.F. Gantmakher, V.T. Dolgopolov “Localized-delocalized electron quantum phase transitions” 51 3–22 (2008)
V.R. Shaginyan, M.Ya. Amusia, K.G. Popov “Universal behavior of strongly correlated Fermi systems” 50 563–593 (2007)
V.T. Dolgopolov “Integer quantum Hall effect and related phenomena” 57 105–127 (2014)
K.V. Reich “Conductivity of quantum dot arrays” 63 994–1014 (2020)
E.L. Shangina, V.T. Dolgopolov “Quantum phase transitions in two-dimensional systems” 46 777–787 (2003)
B.I. Belevtsev “Superconductivity and localization of electrons in disordered two-dimensional metal systems” 33 (1) 36–54 (1990)
Yu.A. Izyumov, E.Z. Kurmaev “Materials with strong electron correlations” 51 23–56 (2008)
I.A. Poluektov, Yu.M. Popov, V.S. Roitberg “Self-induced transparency effect” 17 673–690 (1975)
E.G. Maksimov, Yu.I. Shilov “Hydrogen at high pressure” 42 1121–1138 (1999)
A.A. Likal’ter “Gaseous metals” 35 (7) 591–605 (1992)
A.P. Protogenov “Anyon superconductivity in strongly-correlated spin systems” 35 (7) 535–571 (1992)
A.A. Ovchinnikov, I.I. Ukrainskii, G.V. Kventsel’ “Theory of one-dimensional mott semiconductors and the electronic structure of long molecules having conjugated bonds” 15 575–591 (1973)
S.V. Demishev “Spin-fluctuation transitions” 67 22–43 (2024)
A.A. Likal’ter “Critical points of condensation in Coulomb systems” 43 777–797 (2000)
R.O. Zaitsev, E.V. Kuz’min, S.G. Ovchinnikov “Fundamental ideas on metal-dielectric transitions in 3d-metal compounds” 29 322–342 (1986)
D.I. Khomskii “The problem of intermediate valency” 22 879–903 (1979)

The list is formed automatically.