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Two-dimensional system of strongly interacting electrons in silicon (100) structures

 a, b
a Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
b Editorial Board of JETP Letters, Moscow, Russian Federation

Studies of various experimental groups that explore properties of a two-dimensional electron gas in silicon semiconductor systems ((100)Si-MOSFET and (100) SiGe/Si/SiGe quantum wells) in the vicinity of the metal—insulator transition are described and critically analyzed. Results are identified that are common for all research: (i) the effective mass of electrons measured at the Fermi level in the metallic region increases with decreasing electron density and, if extrapolated, tends to diverge; (ii) the behavior of the energy-averaged mass in the metallic region is quite different in the two systems under study: in Si-MOSFETs, it also exhibits a tendency to diverge, while in the SiGe/Si/SiGe quantum wells, it saturates in the limit of low electron densities; (iii) there is a small number (depending on the sample quality) of localized electrons in the metallic phase; (iv) the properties that the electron system exhibits in the insulating phase, in the vicinity of the metal—insulator transition, are typical for amorphous media with a strong coupling between particles.

Fulltext pdf (897 KB)
Fulltext is also available at DOI: 10.3367/UFNe.2018.10.038449
Keywords: two-dimensional electron systems, metal—insulator transition, effective mass
PACS: 71.27.+a, 71.30.+h, 73.20.−r (all)
DOI: 10.3367/UFNe.2018.10.038449
URL: https://ufn.ru/en/articles/2019/7/a/
000492057500001
2-s2.0-85076758192
2019PhyU...62..633D
Citation: Dolgopolov V T "Two-dimensional system of strongly interacting electrons in silicon (100) structures" Phys. Usp. 62 633–648 (2019)
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Received: 28th, April 2018, revised: 7th, October 2018, 16th, October 2018

Оригинал: Долгополов В Т «Двумерная система сильновзаимодействующих электронов в кремниевых (100) структурах» УФН 189 673–690 (2019); DOI: 10.3367/UFNr.2018.10.038449

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