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Third generation Cu-In-Ga-(S,-Se) based solar inverters

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Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow Region, Russian Federation

This paper reviews literature data on thin film solar cells with an absorbing quaternary layer of Cu-In-Ga-(S,-Se) (CIGS). The paper considers methods of preparation of CIGS layers and discusses the chemical composition, design features and operating principles of CIGS solar cells. The bulk of recent literature reveals how research in the field is starting to change: important results are being obtained by numerically simulating processes in thin-film solar cells; element concentration gradients in the CIGS structure, the spatially nonuniform band gap distribution, and layer grain boundaries are receiving increasing research attention for their respective roles; and kinetic studies are increasing.

Fulltext is available at IOP
Keywords: photovoltaics, thin films, solar cells, chalcopyrites, CIGS
PACS: 81.05.Hd, 84.60.Jt, 88.40.fc, 88.40.jn (all)
DOI: 10.3367/UFNe.2016.06.037827
URL: https://ufn.ru/en/articles/2017/2/c/
Citation: Novikov G F, Gapanovich M V "Third generation Cu-In-Ga-(S,-Se) based solar inverters" Phys. Usp. 60 161–178 (2017)
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Received: 23rd, March 2016, revised: 3rd, June 2016, 9th, June 2016

Оригинал: Новиков Г Ф, Гапанович М В «Солнечные преобразователи третьего поколенияна основе Cu-In-Ga-(S, Se)» УФН 187 173–191 (2017); DOI: 10.3367/UFNr.2016.06.037827

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