This paper reviews literature data on thin film solar cells with an absorbing quaternary layer of Cu-In-Ga-(S,-Se) (CIGS). The paper considers methods of preparation of CIGS layers and discusses the chemical composition, design features and operating principles of CIGS solar cells. The bulk of recent literature reveals how research in the field is starting to change: important results are being obtained by numerically simulating processes in thin-film solar cells; element concentration gradients in the CIGS structure, the spatially nonuniform band gap distribution, and layer grain boundaries are receiving increasing research attention for their respective roles; and kinetic studies are increasing.

Keywords: photovoltaics, thin films, solar cells, chalcopyrites, CIGS PACS: 81.05.Hd, 84.60.Jt, 88.40.fc, 88.40.jn (all) DOI: 10.3367/UFNe.2016.06.037827 URL: https://ufn.ru/en/articles/2017/2/c/ 000401039000003 2-s2.0-85019155292 2017PhyU...60..161N Citation: Novikov G F, Gapanovich M V "Third generation Cu-In-Ga-(S,-Se) based solar inverters" Phys. Usp. 60 161–178 (2017) BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks RT Journal T1 Third generation Cu-In-Ga-(S,-Se) based solar inverters A1 Novikov,G.F. A1 Gapanovich,M.V. PB Physics-Uspekhi PY 2017 FD 10 Feb, 2017 JF Physics-Uspekhi JO Phys. Usp. VO 60 IS 2 SP 161-178 DO 10.3367/UFNe.2016.06.037827 LK https://ufn.ru/en/articles/2017/2/c/ Received: 23rd, March 2016, revised: 3rd, June 2016, accepted: 9th, June 2016 Оригинал: Новиков Г Ф, Гапанович М В «Солнечные преобразователи третьего поколения на основе Cu-In-Ga-(S, Se)» УФН 187 173–191 (2017); DOI: 10.3367/UFNr.2016.06.037827