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Issue 4, 2024
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In memory of Leonid Veniaminovich Keldysh. Reviews of topical problems


Tunneling features in semiconductor nanostructures

 a, b,  c,  c,  c
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
b HSE University, ul. Myasnitskaya 20, Moscow, 101000, Russian Federation
c Lomonosov Moscow State University, Vorobevy Gory, Moscow, 119991, Russian Federation

The most telling scanning tunneling microscopy/spectroscopy (STM/STS) data available on the influence of nonequilibrium tunneling effects and electronic spectra reconstruction are reviewed and theoretically explained by self-consistently considering the nonequilibrium electron distribution and the change (due to the tunneling current) in the electron density of states near the tunneling junction. The paper discusses the basic ideas of self-consistent tunneling theory, which forms the basis for experimental research and which allows many effects observed in STM/STS experiments to be explained as well as new phenomena to be predicted.

Fulltext pdf (1.2 MB)
Fulltext is also available at DOI: 10.3367/UFNe.2017.01.038055
Keywords: tunneling, scanning tunneling microscopy/spectroscopy, localized states, Keldysh diagram technique, nonequilibrium processes, interparticle interaction
PACS: 05.60.Gg, 68.37.Ef, 73.40.Gk, 73.63.−b (all)
DOI: 10.3367/UFNe.2017.01.038055
URL: https://ufn.ru/en/articles/2017/11/b/
000424395100002
2-s2.0-85042146920
2017PhyU...60.1067A
Citation: Arseev P I, Mantsevich V N, Maslova N S, Panov V I "Tunneling features in semiconductor nanostructures" Phys. Usp. 60 1067–1086 (2017)
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Received: 12th, December 2016, 28th, January 2017

Оригинал: Арсеев П И, Манцевич В Н, Маслова Н С, Панов В И «Особенности туннельных процессов в полупроводниковых наноструктурах» УФН 187 1147–1168 (2017); DOI: 10.3367/UFNr.2017.01.038055

L.V. Keldysh is author of Physics-Uspekhi

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