In memory of Leonid Veniaminovich Keldysh. Reviews of topical problems
Tunneling features in semiconductor nanostructures
V.I. Panovc aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation bNational Research University Higher School of Economics, ul. Myasnitskaya 20, Moscow, 101000, Russian Federation cLomonosov Moscow State University, Vorobevy Gory, Moscow, 119991, Russian Federation
The most telling scanning tunneling microscopy/spectroscopy (STM/STS) data available on the influence of nonequilibrium tunneling effects and electronic spectra reconstruction are reviewed and theoretically explained by self-consistently considering the nonequilibrium electron distribution and the change (due to the tunneling current) in the electron density of states near the tunneling junction. The paper discusses the basic ideas of self-consistent tunneling theory, which forms the basis for experimental research and which allows many effects observed in STM/STS experiments to be explained as well as new phenomena to be predicted.
Keywords: tunneling, scanning tunneling microscopy/spectroscopy, localized states, Keldysh diagram technique, nonequilibrium processes, interparticle interaction PACS:05.60.Gg, 68.37.Ef, 73.40.Gk, 73.63.−b (all) DOI:10.3367/UFNe.2017.01.038055 URL: https://ufn.ru/en/articles/2017/11/b/ Citation: Arseev P I, Mantsevich V N, Maslova N S, Panov V I "Tunneling features in semiconductor nanostructures" Phys. Usp.60 1067–1086 (2017)
%0 Journal Article
%T Tunneling features in semiconductor nanostructures
%A P. I. Arseev
%A V. N. Mantsevich
%A N. S. Maslova
%A V. I. Panov
%J Phys. Usp.
Received: 12th, December 2016, accepted: 28th, January 2017