The most telling scanning tunneling microscopy/spectroscopy (STM/STS) data available on the influence of nonequilibrium tunneling effects and electronic spectra reconstruction are reviewed and theoretically explained by self-consistently considering the nonequilibrium electron distribution and the change (due to the tunneling current) in the electron density of states near the tunneling junction. The paper discusses the basic ideas of self-consistent tunneling theory, which forms the basis for experimental research and which allows many effects observed in STM/STS experiments to be explained as well as new phenomena to be predicted.

Keywords: tunneling, scanning tunneling microscopy/spectroscopy, localized states, Keldysh diagram technique, nonequilibrium processes, interparticle interaction PACS: 05.60.Gg, 68.37.Ef, 73.40.Gk, 73.63.−b (all) DOI: 10.3367/UFNe.2017.01.038055 URL: https://ufn.ru/en/articles/2017/11/b/ 000424395100002 2-s2.0-85042146920 2017PhyU...60.1067A Citation: Arseev P I, Mantsevich V N, Maslova N S, Panov V I "Tunneling features in semiconductor nanostructures" Phys. Usp. 60 1067–1086 (2017) BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks TY JOUR TI Tunneling features in semiconductor nanostructures AU Arseev, P. I. AU Mantsevich, V. N. AU Maslova, N. S. AU Panov, V. I. PB Physics-Uspekhi PY 2017 JO Physics-Uspekhi JF Physics-Uspekhi JA Phys. Usp. VL 60 IS 11 SP 1067-1086 UR https://ufn.ru/en/articles/2017/11/b/ ER https://doi.org/10.3367/UFNe.2017.01.038055 Received: 12th, December 2016, accepted: 28th, January 2017 Оригинал: Арсеев П И, Манцевич В Н, Маслова Н С, Панов В И «Особенности туннельных процессов в полупроводниковых наноструктурах» УФН 187 1147–1168 (2017); DOI: 10.3367/UFNr.2017.01.038055 L.V. Keldysh is author of Physics-Uspekhi