Chemical vapor deposition growth of graphene on copper substrates: current trends
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation
The most interesting recent developments and trends in graphene growth technologies on copper substrates are reviewed. Analysis is given of how the substrate preparation quality and other process parameters affect the properties of films obtained at different pressures and temperatures on a copper foil and lower-thickness copper films. The fabrication methods and properties of large single-crystal graphene domains are discussed together with technologies that do not require graphene film transfer onto a dielectric substrate. Another important possible approach, that of graphene growing laterally from specially formed multigraphene and carbon-containing seeds or metal catalysts, is also discussed.