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Chemical vapor deposition growth of graphene on copper substrates: current trends


Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Lavrent'eva 13, Novosibirsk, 630090, Russian Federation

The most interesting recent developments and trends in graphene growth technologies on copper substrates are reviewed. Analysis is given of how the substrate preparation quality and other process parameters affect the properties of films obtained at different pressures and temperatures on a copper foil and lower-thickness copper films. The fabrication methods and properties of large single-crystal graphene domains are discussed together with technologies that do not require graphene film transfer onto a dielectric substrate. Another important possible approach, that of graphene growing laterally from specially formed multigraphene and carbon-containing seeds or metal catalysts, is also discussed.

Fulltext is available at IOP
PACS: 68.65.Pq, 81.05.ue, 81.15.Gh, 81.16.Be (all)
DOI: 10.3367/UFNe.0183.201310i.1115
URL: https://ufn.ru/en/articles/2013/10/d/
Citation: Antonova I V "Chemical vapor deposition growth of graphene on copper substrates: current trends" Phys. Usp. 56 1013–1020 (2013)
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Received: 14th, February 2013, revised: 2nd, March 2013, 27th, February 2013

Оригинал: Антонова И В «Современные тенденции развития технологий выращивания графена методом химического осаждения паров на медных подложках» УФН 183 1115–1122 (2013); DOI: 10.3367/UFNr.0183.201310i.1115

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