Amorphous oxide SiO₂, oxynitride SiO_xN_y, and silicon nitride Si₃N₄ are the three key dielectric materials of silicon device technology. Silicon nitride is currently finding use in a variety of applications, in particular, as a storage medium in next-generation flash memory devices. Varying the chemical composition of nonstoichiometric silicon-rich SiN_x allows a wide-range control of its optical and electrical properties. In this review, an analysis of the electronic structure of silicon nitride of varying composition is presented.

PACS: 71.15.Mb, 71.23.−k, 77.22.−d, 77.55.df, 77.84.Bw, 78.20.−e (all) DOI: 10.3367/UFNe.0182.201205d.0531 URL: https://ufn.ru/en/articles/2012/5/d/ 000307559000004 2-s2.0-84864992214 2012PhyU...55..498G Citation: Gritsenko V A "Electronic structure of silicon nitride" Phys. Usp. 55 498–507 (2012) BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks Received: 8th, December 2011, accepted: 16th, January 2012 Оригинал: Гриценко В А «Электронная структура нитрида кремния» УФН 182 531–541 (2012); DOI: 10.3367/UFNr.0182.201205d.0531