Spintronics: exchange switching of ferromagnetic metallic junctions at a low current density

Yu.V. Gulyaev^a, P.E. Zilberman^b, A.I. Panas^b, E.M. Epshtein^b
^aKotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences, ul. Mokhovaya 11, kor. 7, Moscow, 125009, Russian Federation
^bKotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, pl. Vvedenskogo 1, Fryazino, Moscow Region, 141190, Russian Federation

A review is given on the exchange switching of ferromagnetic metallic junctions under the effect of a low threshold current. A dramatic (orders of magnitude) threshold current reduction is achieved under conditions that include the dominance of the current-driven nonequilibrium spin injection, the optimum relation between spin resistances of the layers, and the application of an external magnetic field near the reorientation phase transition point.

PACS: 72.25.Ba, 72.25.Hg, 75.47.−m (all)
DOI: 10.3367/UFNe.0179.200904b.0359
URL: https://ufn.ru/en/articles/2009/4/b/
Web of Science

000268782400002
Scopus

2-s2.0-68249150911
ADS NASA

2009PhyU...52..335G
Citation: Gulyaev Yu V, Zilberman P E, Panas A I, Epshtein E M "Spintronics: exchange switching of ferromagnetic metallic junctions at a low current density" Phys. Usp. 52 335–343 (2009)

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Оригинал: Гуляев Ю В, Зильберман П Е, Панас А И, Эпштейн Э М «Спинтроника: обменное переключение ферромагнитных металлических переходов при малой плотности тока» УФН 179 359–368 (2009); DOI: 10.3367/UFNr.0179.200904b.0359

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