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Spintronics: exchange switching of ferromagnetic metallic junctions at a low current density

 a,  b,  b,  b
a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, kor. 7, Moscow, 125009, Russian Federation
b Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, pl. Vvedenskogo 1, Fryazino, Moscow Region, 141190, Russian Federation

A review is given on the exchange switching of ferromagnetic metallic junctions under the effect of a low threshold current. A dramatic (orders of magnitude) threshold current reduction is achieved under conditions that include the dominance of the current-driven nonequilibrium spin injection, the optimum relation between spin resistances of the layers, and the application of an external magnetic field near the reorientation phase transition point.

Fulltext is available at IOP
PACS: 72.25.Ba, 72.25.Hg, 75.47.−m (all)
DOI: 10.3367/UFNe.0179.200904b.0359
URL: https://ufn.ru/en/articles/2009/4/b/
Citation: Gulyaev Yu V, Zilberman P E, Panas A I, Epshtein E M "Spintronics: exchange switching of ferromagnetic metallic junctions at a low current density" Phys. Usp. 52 335–343 (2009)
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Оригинал: Гуляев Ю В, Зильберман П Е, Панас А И, Эпштейн Э М «Спинтроника: обменное переключение ферромагнитных металлических переходов при малой плотности тока» УФН 179 359–368 (2009); DOI: 10.3367/UFNr.0179.200904b.0359

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