Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions
E.B. Olshanetskiia,
V. Renardb,
Z.D. Kvona,
I.V. Gornyic,
A.I. Toropova,
J.C. Portalb aRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation bHigh Magnetic Fields Laboratory, Grenoble, France cIoffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation
Joint scientific session of the Physical Sciences Division
of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation ’Strongly correlated electrons in two-dimensional systems’ (26 October 2005)
A joint scientific session of the Physical Science Division of
the Russian Academy of Sciences and the Joint Physical
Society of the Russian Federation was held on 26 October
2006 at the conference room of the Lebedev Physics Institute,
RAS. The following reports were presented at the session.
(1) Pudalov V M (Lebedev Physics Institute, RAS)
’Metal-insulator transitions and related phenomena in a strongly correlated two-dimensional electron system’;
(2) Iordanskii S V, Kashuba A (Landau Institute for Theoretical Physics, RAS) ’Two-dimensional multicomponent electron gas as a model for silicon heterostructures’;
(3) Olshanetskii E B (Institute of Semiconductor
Physics (ISP), RAS SB, Novosibirsk), Renard V (GHML,
MPI-FKF/CNRS, Grenoble, France), Kvon Z D (ISP, RAS
SB, Novosibirsk), Gornyi I V (Institut für Nanotechnologie, Karlsruhe, Germany; Ioffe Physical Technical Institute, RAS, St. Petersburg), Toropov A I (ISP, RAS SB, Novosibirsk), Portal J C (GHML, MPI-FKF/CNRS, Grenoble, France) ’Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions.’
Summaries of the reports are given below.
PT Journal Article
TI Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions
AU Olshanetskii E B
FAU Olshanetskii EB
AU Renard V
FAU Renard V
AU Kvon Z D
FAU Kvon ZD
AU Gornyi I V
FAU Gornyi IV
AU Toropov A I
FAU Toropov AI
AU Portal J C
FAU Portal JC
DP 10 Feb, 2006
TA Phys. Usp.
VI 49
IP 2
PG 211-216
RX 10.1070/PU2006v049n02ABEH005923
URL https://ufn.ru/en/articles/2006/2/h/
SO Phys. Usp. 2006 Feb 10;49(2):211-216