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Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions

 a,  b,  a,  c,  a,  b
a Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
b High Magnetic Fields Laboratory, Grenoble, France
c Ioffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Joint scientific session of the Physical Sciences Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation ’Strongly correlated electrons in two-dimensional systems’ (26 October 2005)

A joint scientific session of the Physical Science Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation was held on 26 October 2006 at the conference room of the Lebedev Physics Institute, RAS. The following reports were presented at the session.
(1) Pudalov V M (Lebedev Physics Institute, RAS) ’Metal-insulator transitions and related phenomena in a strongly correlated two-dimensional electron system’;
(2) Iordanskii S V, Kashuba A (Landau Institute for Theoretical Physics, RAS) ’Two-dimensional multicomponent electron gas as a model for silicon heterostructures’;
(3) Olshanetskii E B (Institute of Semiconductor Physics (ISP), RAS SB, Novosibirsk), Renard V (GHML, MPI-FKF/CNRS, Grenoble, France), Kvon Z D (ISP, RAS SB, Novosibirsk), Gornyi I V (Institut für Nanotechnologie, Karlsruhe, Germany; Ioffe Physical Technical Institute, RAS, St. Petersburg), Toropov A I (ISP, RAS SB, Novosibirsk), Portal J C (GHML, MPI-FKF/CNRS, Grenoble, France) ’Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions.’
Summaries of the reports are given below.

Fulltext is available at IOP
PACS: 01.10.Fv, 71.27.+a, 71.30.+h, 72.15.Rn (all)
DOI: 10.1070/PU2006v049n02ABEH005923
URL: https://ufn.ru/en/articles/2006/2/h/
Citation: Olshanetskii E B, Renard V, Kvon Z D, Gornyi I V, Toropov A I, Portal J C "Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions" Phys. Usp. 49 211–216 (2006)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions
AU Olshanetskii, E. B.
AU Renard, V.
AU Kvon, Z. D.
AU Gornyi, I. V.
AU Toropov, A. I.
AU Portal, J. C.
PB Physics-Uspekhi
PY 2006
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 49
IS 2
SP 211-216
UR https://ufn.ru/en/articles/2006/2/h/
ER https://doi.org/10.1070/PU2006v049n02ABEH005923

Оригинал: Ольшанецкий Е Б, Ренар В, Квон З Д, Горный И В, Торопов А И, Портал Ж К «Эффекты взаимодействия в транспорте и магнитотранспорте двумерных электронов в гетеропереходах AlGaAs/GaAs и Si/SiGe» УФН 176 222–227 (2006); DOI: 10.3367/UFNr.0176.200602g.0222

References (16) Cited by (1)

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