Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions

E.B. Olshanetskii^a, V. Renard^b, Z.D. Kvon^a, I.V. Gornyi^c, A.I. Toropov^a, J.C. Portal^b
^aRzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
^bHigh Magnetic Fields Laboratory, Grenoble, France
^cIoffe Institute, ul. Polytekhnicheskaya 26, St. Petersburg, 194021, Russian Federation

Joint scientific session of the Physical Sciences Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation ’Strongly correlated electrons in two-dimensional systems’ (26 October 2005)

A joint scientific session of the Physical Science Division of the Russian Academy of Sciences and the Joint Physical Society of the Russian Federation was held on 26 October 2006 at the conference room of the Lebedev Physics Institute, RAS. The following reports were presented at the session.
(1) Pudalov V M (Lebedev Physics Institute, RAS) ’Metal-insulator transitions and related phenomena in a strongly correlated two-dimensional electron system’;
(2) Iordanskii S V, Kashuba A (Landau Institute for Theoretical Physics, RAS) ’Two-dimensional multicomponent electron gas as a model for silicon heterostructures’;
(3) Olshanetskii E B (Institute of Semiconductor Physics (ISP), RAS SB, Novosibirsk), Renard V (GHML, MPI-FKF/CNRS, Grenoble, France), Kvon Z D (ISP, RAS SB, Novosibirsk), Gornyi I V (Institut für Nanotechnologie, Karlsruhe, Germany; Ioffe Physical Technical Institute, RAS, St. Petersburg), Toropov A I (ISP, RAS SB, Novosibirsk), Portal J C (GHML, MPI-FKF/CNRS, Grenoble, France) ’Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions.’
Summaries of the reports are given below.

PACS: 01.10.Fv, 71.27.+a, 71.30.+h, 72.15.Rn (all)
DOI: 10.1070/PU2006v049n02ABEH005923
URL: https://ufn.ru/en/articles/2006/2/h/
Web of Science

000238659100007
Scopus

2-s2.0-33745651822
ADS NASA

2006PhyU...49..211O
Citation: Olshanetskii E B, Renard V, Kvon Z D, Gornyi I V, Toropov A I, Portal J C "Interaction effects in the transport and magnetotransport of two-dimensional electrons in AlGaAs/GaAs and Si/SiGe heterojunctions" Phys. Usp. 49 211–216 (2006)

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Оригинал: Ольшанецкий Е Б, Ренар В, Квон З Д, Горный И В, Торопов А И, Портал Ж К «Эффекты взаимодействия в транспорте и магнитотранспорте двумерных электронов в гетеропереходах AlGaAs/GaAs и Si/SiGe» УФН 176 222–227 (2006); DOI: 10.3367/UFNr.0176.200602g.0222