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Photoinduced and thermal noise in semiconductor p-n junctions


State Research Center of Russian Federation, Federal State Unitary Enterprise, RD&P Center ‘Orion’, shosse Entuziastov 46/2, Moscow, 111123, Russian Federation

A brief review of the literature on the theory of thermal and photoinduced noise in semiconductor p-n junctions is given. The coordinate and frequency dependences of photoinduced noise in a p+-n junction with a locally irradiated n-region are calculated. In contrast to vacuum tubes, where the physical sources of current distribution noise are still unknown, it is established that in p+-n junctions, this noise is produced by fluctuations in the local hole recombination and diffusion rates in the n-region. White high-frequency spectra of thermal and photoinduced noise arise when the hole concentration increases linearly outside the space charge region and occur because the diffusion noise currents and the effective length for collecting noise from the n-region compensate each other in terms of frequency dependence.

Fulltext pdf (259 KB)
Fulltext is also available at DOI: 10.1070/PU2006v049n12ABEH006134
PACS: 72.70.+m, 85.30.−z, 85.60.Dw (all)
DOI: 10.1070/PU2006v049n12ABEH006134
URL: https://ufn.ru/en/articles/2006/12/e/
000245748100005
2-s2.0-34247270816
2006PhyU...49.1289T
Citation: Taubkin I I "Photoinduced and thermal noise in semiconductor p-n junctions" Phys. Usp. 49 1289–1306 (2006)
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Оригинал: Таубкин И И «Фотоиндуцированные и тепловые шумы в полупроводниковых p-n переходах» УФН 176 1321–1339 (2006); DOI: 10.3367/UFNr.0176.200612e.1321

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