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Photoinduced and thermal noise in semiconductor p-n junctions


State Research Center ofRussian Federation, Federal State Unitary Enterprise, RD&P Center Orion, shosse Entuziastov 46/2, Moscow, 111123, Russian Federation

A brief review of the literature on the theory of thermal and photoinduced noise in semiconductor p-n junctions is given. The coordinate and frequency dependences of photoinduced noise in a p+-n junction with a locally irradiated n-region are calculated. In contrast to vacuum tubes, where the physical sources of current distribution noise are still unknown, it is established that in p+-n junctions, this noise is produced by fluctuations in the local hole recombination and diffusion rates in the n-region. White high-frequency spectra of thermal and photoinduced noise arise when the hole concentration increases linearly outside the space charge region and occur because the diffusion noise currents and the effective length for collecting noise from the n-region compensate each other in terms of frequency dependence.

Fulltext is available at IOP
PACS: 72.70.+m, 85.30.−z, 85.60.Dw (all)
DOI: 10.1070/PU2006v049n12ABEH006134
URL: https://ufn.ru/en/articles/2006/12/e/
Citation: Taubkin I I "Photoinduced and thermal noise in semiconductor p-n junctions" Phys. Usp. 49 1289–1306 (2006)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1 Photoinduced and thermal noise in semiconductor p – n junctions
A1 Taubkin,I.I.
PB Physics-Uspekhi
PY 2006
FD 10 Dec, 2006
JF Physics-Uspekhi
JO Phys. Usp.
VO 49
IS 12
SP 1289-1306
DO 10.1070/PU2006v049n12ABEH006134
LK https://ufn.ru/en/articles/2006/12/e/

:    «     p-n » 176 1321–1339 (2006); DOI: 10.3367/UFNr.0176.200612e.1321

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