Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

R.Z. Bakhtizin^a, Q.-Zh. Xue^b, Q.-K. Xue^b, K.-H. Wu^b, T. Sakurai^b
^aDepartment of Physical Electronics, Bashkir State University, Ufa, Russian Federation
^bInstitute for Materials Research, Tohoku University, 2-1-1 Katahira, Sendai, 980-77, Japan

The current status of studies and new trends in obtaining and exploring surface characteristics of III-nitride semiconductors are analyzed and reviewed. Using a unique setup combining a scanning tunneling microscope (STM) with an inline molecular-beam epitaxy (MBE) chamber, the surface atomic structures on both hexagonal and cubic GaN films grown by nitrogen-plasma-assisted MBE have been studied in situ over a broad range of temperatures and [N]/[Ga] ratios. Models of the observed surface phases are developed based on the comparative analysis of their atomic-resolution STM images and ab initio total energy calculations.

PACS: 61.14.Hg, 71.15.Nc, 81.05.Ea (all)
DOI: 10.1070/PU2004v047n04ABEH001643
URL: https://ufn.ru/en/articles/2004/4/d/
Web of Science

000223560800004
ADS NASA

2004PhyU...47..371B
Citation: Bakhtizin R Z, Xue Q-Zh, Xue Q-K, Wu K-H, Sakurai T "Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth" Phys. Usp. 47 371–391 (2004)

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Оригинал: Бахтизин Р З, Щуе Ч-Ж, Щуе Ч-К, Ву К-Х, Сакурай Т «Сканирующая туннельная микроскопия гетероэпитаксиального роста пленок III-нитридов» УФН 174 383–405 (2004); DOI: 10.3367/UFNr.0174.200404d.0383