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New semiconductor laser designs and the exploratory investigation of the terahertz frequency range

 a,  b,  a,  a,  a,  c
a Federal Research Center Institute of Applied Physics of the Russian Academy of Sciences, ul. Ulyanova 46, Nizhny Novgorod, 603000, Russian Federation
b Department of Electrical and Computer Engineering, University of Texas, Austin, USA
c Institute for Quantum Studies and Department of Physics, Texas A&M University, College Station, Texas, USA
Fulltext is available at IOP
PACS: 42.55.Px, 42.60.−v (all)
DOI: 10.1070/PU2003v046n09ABEH001646
URL: https://ufn.ru/en/articles/2003/9/j/
Citation: Belyanin A A, Deppe D, Kocharovskii V V, Kocharovskii V V, Pestov D S, Sculli M O "New semiconductor laser designs and the exploratory investigation of the terahertz frequency range" Phys. Usp. 46 986–992 (2003)
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Оригинал: Белянин А А, Деппе Д, Кочаровский В В, Кочаровский В В, Пестов Д С, Скалли М О «Новые схемы полупроводниковых лазеров и освоение терагерцового диапазона» УФН 173 1015–1021 (2003); DOI: 10.3367/UFNr.0173.200309k.1015

References (57) ↓ Cited by (21) Similar articles (18)

  1. Miles R E, Harrison P, Lippens D (Eds) Terahertz Sources And Systems (NATO Science Series, Ser. II, Vol. 27) (Dordrecht: Kluwer Acad. Publ., 2001)
  2. Mittleman D (Ed.) Sensing With Terahertz Radiation (Springer Series In Optical Sciences, Vol. 85) (Berlin: Springer, 2003)
  3. Van der Weide D Opt. Photonics News 14 (4) 48 (2003); Negirev A A v Sb. Vakuumnaya SVCh Elektronika (Otv. red. M I Petelin) (N. Novgorod: IPF RAN, 2002) p. 93
  4. Zvelto O Printsipy Lazerov 2-e izd. (M.: Mir, 1984)
  5. Dyakonov M, Shur M S Terahertz Sources And Systems (NATO Science Series, Ser. II, Vol. 27, Eds R E Miles, P Harrison, D Lippens) (Dordrecht: Kluwer Acad. Publ., 2001) p. 187; Knap W et al. J. Appl. Phys. 91 9346 (2002); Knap W et al. Appl. Phys. Lett. 80 3433 (2002); Knap W et al. Appl. Phys. Lett. 81 4637 (2002)
  6. Hu B B, Zhang X-C, Auston D H Phys. Rev. Lett. 67 2709 (1991); Li M et al. Proc. SPIE 3616 126 (1999); Bespalov V G i dr. Optika Spektrosk. 93 158 (2002)
  7. Kersting R et al. Phys. Rev. Lett. 79 3038 (1997)
  8. Matsuura S, Tani M, Sakai K Appl. Phys. Lett. 70 559 (1997); Chen Q et al. Opt. Lett. 25 1122 (2000)
  9. Colson W B, Pellegrini C, Renieri A (Eds) Laser Handbook Vol. 6. Free Electron Lasers (Amsterdam: North-Holland, 1990); Colson W B Nucl. Instrum. Meth. A 407 26 (1998)
  10. Shi W et al. Opt. Lett. 27 1454 (2002); Shi W et al. Opt. Photonics News 13 (12) 57 (2002)
  11. Shikata J et al. IEEE Trans. Microw. Theory Tech. 48 653 (2000); Imai K et al. Appl. Phys. Lett. 78 1026 (2001)
  12. Tacke M Infrared Phys. Technol. 36 447 (1995); Hodges M, Schiessl U P Proc. SPIE 3628 113 (1999)
  13. Kapon E (Ed.) Semiconductor Lasers (San Diego: Academic Press, 1999)
  14. Andronov A A i dr. Pis’ma ZhETF 30 585 (1979); Andronov A A et al. Opt. Quant. Electron. 23 S205 (1991); Shastin V N Opt. Quant. Electron. 23 S111 (1991)
  15. Gousev Yu P et al. Appl. Phys. Lett. 75 757 (1999)
  16. Bründermann E, ChamberlD R, Haller E E Appl. Phys. Lett. 76 2991 (2000)
  17. Faist J et al. Science 264 553 (1994)
  18. Faist J et al. In Intersubband Transitions In Quantum Wells: Physics And Device Applications II (Semiconductors And Semimetals, Vol. 66, Eds H C Liu, F Capasso) (New York: Academic Press, 2000) p. 1
  19. Capasso F et al. Phys. Today 55 (5) 34 (2002); Capasso F et al. Opt. Photonics News 12 (5) 40 (2001)
  20. Köhler R et al. Nature 417 156 (2002)
  21. Colombelli R et al. Appl. Phys. Lett. 78 2620 (2001)
  22. Faist J et al. IEEE. Quantum Electron. 38 533 (2002)
  23. Gauthier-Lafaye O et al. Appl. Phys. Lett. 71 3619 (1997); Gauthier-Lafaye O et al. Appl. Phys. Lett. 74 1537 (1999)
  24. Orlova E E et al. Phys. Status Solidi B 210 859 (1998); Orlova E E et al. Physica B 302-303 342 (2001)
  25. Pavlov S G et al. Phys. Rev. Lett. 84 5220 (2000); Pavlov S G et al. In Towards The First Silicon Laser (NATO Sciences Series, Ser. II, Vol. 93, Eds L Pavesi, S Gaponenko, L Dal Negro) (Boston, Mass.: Kluwer Acad. Publ., 2003) p. 331; Shastin V In Towards The First Silicon Laser (NATO Sciences Series, Ser. II, Vol. 93, Eds L Pavesi, S Gaponenko, L Dal Negro) (Boston, Mass.: Kluwer Acad. Publ., 2003) p. 341
  26. Hübers H-W et al. Physica B 308-310 232 (2001); Hübers H-W et al. Appl. Phys. Lett. 74 2655 (1999)
  27. Aleshkin V Ya i dr. v Sb. Nanofotonika (N. Novgorod: IFM RAN, 2002) p. 236; Aleshkin V Ya, Andronov A A Pis’ma ZhETF 68 73 (1998)
  28. Vorob’ev L E Pis’ma ZhETF 68 392 (1998); Singh J IEEE Photonics Technol. Lett. 8 488 (1996)
  29. Vorobjev L E et al. In Proc. Of 7th Intern. Symp. Nanostructures: Physics And Technology, St. Petersburg, 14 - 18 June 1999 (St. Petersburg: Ioffe Institute, 1999) p. 423
  30. Belyanin A A et al. Phys. Rev. A 63 053803 (2001)
  31. Belyanin A A et al. Nanotechnology 12 450 (2001); Belyanin A A et al. Proc. SPIE 4605 363 (2001)
  32. Belyanin A A i dr. Izv. RAN. Ser. Fiz 66 247 (2002); Belyanin A A i dr. v Sb. Nanofotonika (N. Novgorod: IFM RAN, 2002) p. 120
  33. Belyanin A et al. Phys. Rev. A 65 053824 (2002)
  34. Belyanin A A i dr. Izv. RAN. Ser. Fiz 67 262 (2003)
  35. Aleshkin V Ya, Afonenko A A, Zvonkov N B Fiz. Tekh. Poluprovodn. 35 1256 (2001)
  36. Sirtori C et al. Appl. Phys. Lett. 65 445 (1994)
  37. Capasso F et al. In Intersubband Transitions In Quantum Wells: Physics And Device Applicatiion II (Semiconductors And Semimetals, Vol. 66, Eds H C Liu, F Capasso) (New York: Academic Press, 2000) p. 85
  38. Liu et al. In Nonlinear Optics: Materials, Fundamentals And Applications, OSA Technical Digest Vol. 56 (Washington DC: Optical Society of America, 2000)
  39. Knurgin J B In Nonlinear Optics In Semicondactors II (Semiconductor And Semimetals, Vol. 59, Eds E Garmire, A Cost) (San Diego: Academic Press, 1999)
  40. Owschimikow N et al. Phys. Rev. Lett. 90 043902 (2003)
  41. Korsunsky E A, Kosachiov D V J. Opt. Soc. Am. B 17 1405 (2000)
  42. Chow W W, Koch S W Semiconductor-Laser Fundamentals: Physics Of The Gain Materials (Berlin: Springer, 1999)
  43. Belyanin A A et al. Phys. Rev. A 64 013814 (2001)
  44. Tokuda Y et al. Appl. Phys. Lett. 49 1629 (1986); Ikeda S, Shimizu A Appl. Phys. Lett. 59 504 (1991)
  45. Chen T R et al. Appl. Phys. Lett. 60 2954 (1992); Kaneko Y et al. J. Appl. Phys. 87 1597 (2000)
  46. Aleshkin V Ya i dr. v Sb. Nanofotonika (N. Novgorod: IFM RAN, 2003) p. 315
  47. Schmid W et al. Electron. Lett. 34 553 (1998)
  48. Kim J K et al. Appl. Phys. Lett. 74 3251 (1999); Kim J K et al. Appl. Phys. Lett. 77 3137 (2000)
  49. Ozden I et al. Appl. Phys. Lett. 79 2532 (2001)
  50. Malyarchuk V et al. J. Appl. Phys. 92 2729 (2002)
  51. Rochat M et al. Appl. Phys. Lett. 73 3724 (1998); Ulrich J et al. Appl. Phys. Lett. 77 1928 (2000)
  52. Rochat M et al. Appl. Phys. Lett. 78 1967 (2001)
  53. Oster B, Fouckhardt H IEEE Photonics Technol. Lett. 13 672 (2001)
  54. Sirtori C et al. Opt. Lett. 23 1366 (1998)
  55. Sirtori C et al. Appl. Phys. Lett. 75 3911 (1999)
  56. Belyanin A A i dr. Izv. RAN. Ser. Fiz 66 365 (2002)
  57. Belyanin A A et al. Laser Phys. 13 161 (2003)

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