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Issue 9, 2026
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Conferences and symposia


New semiconductor laser designs and the exploratory investigation of the terahertz frequency range

 a,  b,  a,  a,  a,  c
a Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, ul. Ulyanova 46, Nizhny Novgorod, 603000, Russian Federation
b Department of Electrical and Computer Engineering, University of Texas, Austin, USA
c Institute for Quantum Studies and Department of Physics, Texas A&M University, College Station, Texas, USA
Fulltext pdf (362 KB)
Fulltext is also available at DOI: 10.1070/PU2003v046n09ABEH001646
PACS: 42.55.Px, 42.60.−v (all)
DOI: 10.1070/PU2003v046n09ABEH001646
URL: https://ufn.ru/en/articles/2003/9/j/
000188171400010
Citation: Belyanin A A, Deppe D, Kocharovskii V V, Kocharovskii V V, Pestov D S, Sculli M O "New semiconductor laser designs and the exploratory investigation of the terahertz frequency range" Phys. Usp. 46 986–992 (2003)
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Оригинал: Белянин А А, Деппе Д, Кочаровский В В, Кочаровский В В, Пестов Д С, Скалли М О «Новые схемы полупроводниковых лазеров и освоение терагерцового диапазона» УФН 173 1015–1021 (2003); DOI: 10.3367/UFNr.0173.200309k.1015

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