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New semiconductor laser designs and the exploratory investigation of the terahertz frequency range

 a,  b,  a,  a,  a,  c
a Federal Research Center Institute of Applied Physics of the Russian Academy of Sciences, ul. Ulyanova 46, Nizhny Novgorod, 603000, Russian Federation
b Department of Electrical and Computer Engineering, University of Texas, Austin, USA
c Institute for Quantum Studies and Department of Physics, Texas A&M University, College Station, Texas, USA
Fulltext is available at IOP
PACS: 42.55.Px, 42.60.−v (all)
DOI: 10.1070/PU2003v046n09ABEH001646
URL: https://ufn.ru/en/articles/2003/9/j/
Citation: Belyanin A A, Deppe D, Kocharovskii V V, Kocharovskii V V, Pestov D S, Sculli M O "New semiconductor laser designs and the exploratory investigation of the terahertz frequency range" Phys. Usp. 46 986–992 (2003)
BibTexBibNote ® (generic) BibNote ® (RIS)MedlineRefWorks
TY JOUR
TI New semiconductor laser designs and the exploratory investigation of the terahertz frequency range

AU Belyanin, A. A.
AU Deppe, D.
AU Kocharovskii, V. V.
AU Kocharovskii, V. V.
AU Pestov, D. S.
AU Sculli, M. O.
PB Physics-Uspekhi
PY 2003
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 46
IS 9
SP 986-992
UR https://ufn.ru/en/articles/2003/9/j/
ER https://doi.org/10.1070/PU2003v046n09ABEH001646

Оригинал: Белянин А А, Деппе Д, Кочаровский В В, Кочаровский В В, Пестов Д С, Скалли М О «Новые схемы полупроводниковых лазеров и освоение терагерцового диапазона» УФН 173 1015–1021 (2003); DOI: 10.3367/UFNr.0173.200309k.1015

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