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New semiconductor laser designs and the exploratory investigation of the terahertz frequency range

 a,  b,  a,  a,  a,  c
a Federal Research Center A.V. Gaponov-Grekhov Institute of Applied Physics of the Russian Academy of Sciences, ul. Ulyanova 46, Nizhny Novgorod, 603000, Russian Federation
b Department of Electrical and Computer Engineering, University of Texas, Austin, USA
c Institute for Quantum Studies and Department of Physics, Texas A&M University, College Station, Texas, USA
Fulltext pdf (362 KB)
Fulltext is also available at DOI: 10.1070/PU2003v046n09ABEH001646
PACS: 42.55.Px, 42.60.−v (all)
DOI: 10.1070/PU2003v046n09ABEH001646
URL: https://ufn.ru/en/articles/2003/9/j/
000188171400010
Citation: Belyanin A A, Deppe D, Kocharovskii V V, Kocharovskii V V, Pestov D S, Sculli M O "New semiconductor laser designs and the exploratory investigation of the terahertz frequency range" Phys. Usp. 46 986–992 (2003)
BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks
PT Journal Article
TI New semiconductor laser designs and the exploratory investigation of the terahertz frequency range

AU Belyanin A A
FAU Belyanin AA
AU Deppe D
FAU Deppe D
AU Kocharovskii V V
FAU Kocharovskii VV
AU Kocharovskii V V
FAU Kocharovskii VV
AU Pestov D S
FAU Pestov DS
AU Sculli M O
FAU Sculli MO
DP 10 Sep, 2003
TA Phys. Usp.
VI 46
IP 9
PG 986-992
RX 10.1070/PU2003v046n09ABEH001646
URL https://ufn.ru/en/articles/2003/9/j/
SO Phys. Usp. 2003 Sep 10;46(9):986-992

Оригинал: Белянин А А, Деппе Д, Кочаровский В В, Кочаровский В В, Пестов Д С, Скалли М О «Новые схемы полупроводниковых лазеров и освоение терагерцового диапазона» УФН 173 1015–1021 (2003); DOI: 10.3367/UFNr.0173.200309k.1015

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