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2003

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June

  

Instruments and methods of investigation


Cadmium mercury telluride and the new generation of photoelectronic devices


State Research Center ofRussian Federation, Federal State Unitary Enterprise, RD&P Center Orion, shosse Entuziastov 46/2, Moscow, 111123, Russian Federation

This paper is a 1969-2002 progress report on the development of solid semiconductor solutions of cadmium-mercury tellurides (single crystals and epitaxial layers) as well as of infrared photodetectors based on them (photoresistors and photodiodes, including the array variety).

Text can be downloaded in Russian. English translation is available on IOP Science.
PACS: 01.65.+g, 07.57.Kp, 85.60.Gz (all)
DOI: 10.1070/PU2003v046n06ABEH001372
URL: https://ufn.ru/en/articles/2003/6/c/
Citation: Ponomarenko V P "Cadmium mercury telluride and the new generation of photoelectronic devices" Phys. Usp. 46 629–644 (2003)
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:    « -   o » 173 649–665 (2003); DOI: 10.3367/UFNr.0173.200306c.0649

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