Cadmium mercury telluride and the new generation of photoelectronic devices

V.P. Ponomarenko
State Research Center of Russian Federation, Federal State Unitary Enterprise, RD&P Center ‘Orion’, shosse Entuziastov 46/2, Moscow, 111123, Russian Federation

This paper is a 1969-2002 progress report on the development of solid semiconductor solutions of cadmium-mercury tellurides (single crystals and epitaxial layers) as well as of infrared photodetectors based on them (photoresistors and photodiodes, including the array variety).

PACS: 01.65.+g, 07.57.Kp, 85.60.Gz (all)
DOI: 10.1070/PU2003v046n06ABEH001372
URL: https://ufn.ru/en/articles/2003/6/c/
Web of Science

000185710500003
Citation: Ponomarenko V P "Cadmium mercury telluride and the new generation of photoelectronic devices" Phys. Usp. 46 629–644 (2003)

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RefWorks

RT Journal
T1 Cadmium mercury telluride and the new generation of photoelectronic devices
A1 Ponomarenko,V.P.
PB Physics-Uspekhi
PY 2003
FD 10 Jun, 2003
JF Physics-Uspekhi
JO Phys. Usp.
VO 46
IS 6
SP 629-644
DO 10.1070/PU2003v046n06ABEH001372
LK https://ufn.ru/en/articles/2003/6/c/

Оригинал: Пономаренко В П «Теллурид кадмия-ртути и новое покoление приборов инфракрасной фотоэлектроники» УФН 173 649–665 (2003); DOI: 10.3367/UFNr.0173.200306c.0649