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Instruments and methods of investigation


Cadmium mercury telluride and the new generation of photoelectronic devices


State Research Center of Russian Federation, Federal State Unitary Enterprise, RD&P Center ‘Orion’, shosse Entuziastov 46/2, Moscow, 111123, Russian Federation

This paper is a 1969-2002 progress report on the development of solid semiconductor solutions of cadmium-mercury tellurides (single crystals and epitaxial layers) as well as of infrared photodetectors based on them (photoresistors and photodiodes, including the array variety).

Fulltext pdf (680 KB)
Fulltext is also available at DOI: 10.1070/PU2003v046n06ABEH001372
PACS: 01.65.+g, 07.57.Kp, 85.60.Gz (all)
DOI: 10.1070/PU2003v046n06ABEH001372
URL: https://ufn.ru/en/articles/2003/6/c/
000185710500003
Citation: Ponomarenko V P "Cadmium mercury telluride and the new generation of photoelectronic devices" Phys. Usp. 46 629–644 (2003)
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Оригинал: Пономаренко В П «Теллурид кадмия-ртути и новое покoление приборов инфракрасной фотоэлектроники» УФН 173 649–665 (2003); DOI: 10.3367/UFNr.0173.200306c.0649

References (57) Cited by (30) ↓ Similar articles (10)

  1. Dvoretsky S A, Vasiliev V V et al Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors Chapter 15 (2023) p. 423
  2. Kamantsev A P, Amirov A A et al Phys. Metals Metallogr. 124 1075 (2023)
  3. Kamantsev A P, Koledov V V et al Phys. Metals Metallogr. 123 419 (2022)
  4. Kislitsyn S A, Berdnikov V S J. Phys.: Conf. Ser. 2119 012084 (2021)
  5. Kazantsev D V, Kazantseva E A Instrum Exp Tech 63 133 (2020)
  6. Paramonov V V, Novikova O V, Kosushkin V G Izv. Vysš. Učebn. Zaved., Mater. èlektron. Teh. 21 43 (2019)
  7. Zolotukhina O S, Arbuzov V A et al J. Phys.: Conf. Ser. 1382 012203 (2019)
  8. Guselnikova O O, Kislitsyn SA et al J. Phys.: Conf. Ser. 1382 012109 (2019)
  9. Talipov N Kh, Voitsekhovskii A V Russ Phys J 61 1005 (2018)
  10. Burlakov I D, Dirochka A I et al J. Commun. Technol. Electron. 61 1166 (2016)
  11. Nurullaev Yu G, Barkhalov B Sh High Energy Chem 50 344 (2016)
  12. Izhnin I I, Mynbaev K D et al Infrared Physics & Technology 73 158 (2015)
  13. Lysiuk I O, Olikh Ya M et al Ukr. J. Phys. 59 50 (2014)
  14. Kholodnov V A Semiconductors 47 66 (2013)
  15. Nurullaev Yu G, Barkhalov B S, Novruzova S K High Energy Chem 47 127 (2013)
  16. Nurullaev Yu G, Barkhalov B Sh, Novruzova S K High Energy Chem 46 266 (2012)
  17. Burlakov I D, Demin A V et al Meas Tech 53 615 (2010)
  18. Pociask M, Izhnin I I et al Thin Solid Films 518 3879 (2010)
  19. Izhnin I I, Dvoretsky S A et al Tech. Phys. Lett. 34 981 (2008)
  20. Voitsekhovskii A V, Grigor’ev D V, Talipov N Kh Russ Phys J 51 1001 (2008)
  21. Kotkov A P, Grishnova N D et al Inorg Mater 44 1305 (2008)
  22. Pociask M, Izhnin I I et al Semiconductors 42 1413 (2008)
  23. Bogoboyashchyy V V, Izhnin I I et al Semiconductors 41 804 (2007)
  24. Izhnin I I, Dvoretsky S A et al 91 (13) (2007)
  25. Mynbaev K D, Ivanov-Omskiĭ V I Semiconductors 40 1 (2006)
  26. Bogoboyashchyy V V, Izhnin I I et al Semicond. Sci. Technol. 21 1144 (2006)
  27. Izhnin I, Korbutyak D et al Phys. Status Solidi (c) 3 1063 (2006)
  28. Bogoboyashchyy V V, Izhnin I I, Mynbaev K D Semicond. Sci. Technol. 21 116 (2006)
  29. Izhnin I I Semicond. Phys. Quantum Electron. Optoelectron. 8 53 (2005)
  30. Bogoboyashchyy V V, Elizarov A I, Izhnin I I Semicond. Sci. Technol. 20 726 (2005)
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