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Instruments and methods of investigation


Cadmium mercury telluride and the new generation of photoelectronic devices


State Research Center of Russian Federation, Federal State Unitary Enterprise, RD&P Center ‘Orion’, shosse Entuziastov 46/2, Moscow, 111123, Russian Federation

This paper is a 1969-2002 progress report on the development of solid semiconductor solutions of cadmium-mercury tellurides (single crystals and epitaxial layers) as well as of infrared photodetectors based on them (photoresistors and photodiodes, including the array variety).

Fulltext pdf (680 KB)
Fulltext is also available at DOI: 10.1070/PU2003v046n06ABEH001372
PACS: 01.65.+g, 07.57.Kp, 85.60.Gz (all)
DOI: 10.1070/PU2003v046n06ABEH001372
URL: https://ufn.ru/en/articles/2003/6/c/
000185710500003
Citation: Ponomarenko V P "Cadmium mercury telluride and the new generation of photoelectronic devices" Phys. Usp. 46 629–644 (2003)
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Оригинал: Пономаренко В П «Теллурид кадмия-ртути и новое покoление приборов инфракрасной фотоэлектроники» УФН 173 649–665 (2003); DOI: 10.3367/UFNr.0173.200306c.0649

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