Issues

 / 

2002

 / 

August

  

Reviews of topical problems


Mixed-valence impurities in lead telluride-based solid solutions

 a,  b,  c
a Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
b Department of Chemistry, M.V. Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992, Russian Federation
c Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation

Experimental data on impurity states in narrow-gap lead telluride based semiconductors are summarized. Theoretical models describing the nontrivial properties of such states are presented. Applications to the design of highly sensitive far-infrared detectors are considered.

Fulltext pdf (728 KB)
Fulltext is also available at DOI: 10.1070/PU2002v045n08ABEH001146
PACS: 71.23.An, 71.55.−i, 85.60.Gz (all)
DOI: 10.1070/PU2002v045n08ABEH001146
URL: https://ufn.ru/en/articles/2002/8/b/
000179657600002
Citation: Volkov B A, Ryabova L I, Khokhlov D R "Mixed-valence impurities in lead telluride-based solid solutions" Phys. Usp. 45 819–846 (2002)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Волков Б А, Рябова Л И, Хохлов Д Р «Примеси с переменной валентностью в твердых растворах на основе теллурида свинца» УФН 172 875–906 (2002); DOI: 10.3367/UFNr.0172.200208b.0875

References (180) Cited by (219) Similar articles (20) ↓

  1. V.I. Kaidanov, Yu.I. Ravich “Deep and resonance states in AIV BVI semiconductorsSov. Phys. Usp. 28 31–53 (1985)
  2. S.A. Nemov, Yu.I. Ravich “Thallium dopant in lead chalcogenides: investigation methods and peculiaritiesPhys. Usp. 41 735–759 (1998)
  3. L.I. Ryabova, D.R. Khokhlov “Terahertz photoconductivity and nontrivial local electronic states in doped lead telluride-based semiconductorsPhys. Usp. 57 959–969 (2014)
  4. I.G. Neizvestnyi, A.E. Klimov, V.N. Shumsky “Photon far-infrared and sub-millimeters array detectorsPhys. Usp. 58 952–962 (2015)
  5. K.V. Mitsen, O.M. Ivanenko “Phase diagram of La2-xMxCuO4 as the key to understanding the nature of high-Tc superconductorsPhys. Usp. 47 493–510 (2004)
  6. M.I. Klinger “Self-trapped electron and hole statesSov. Phys. Usp. 28 391–413 (1985)
  7. I.K. Kikoin, S.D. Lazarev “Photoelectromagnetic effectSov. Phys. Usp. 21 297–308 (1978)
  8. I.M. Tsidil’kovskii “Zero-gap semiconductors with magnetic impurities forming resonance donor statesSov. Phys. Usp. 35 (2) 85–105 (1992)
  9. N.N. Berchenko, M.V. Pashkovskii “Mercury telluride—a zero-gap semiconductorSov. Phys. Usp. 19 462–480 (1976)
  10. D.I. Khomskii “The problem of intermediate valencySov. Phys. Usp. 22 879–903 (1979)
  11. I.M. Suslov “Development of a (4-ε)-dimensional theory for the density of states of a disordered system near the Anderson transitionPhys. Usp. 41 441–467 (1998)
  12. M.I. Klinger “Low-temperature properties and localized electronic states of glassesSov. Phys. Usp. 30 699–715 (1987)
  13. V.V. Val’kov, M.S. Shustin et alTopological superconductivity and Majorana states in low-dimensional systemsPhys. Usp. 65 2–39 (2022)
  14. M.F. Deigen, M.D. Glinchuk “Paraelectric resonance of noncentral ionsSov. Phys. Usp. 17 691–704 (1975)
  15. A.V. Dmitriev, I.P. Zvyagin “Current trends in the physics of thermoelectric materialsPhys. Usp. 53 789–803 (2010)
  16. A.L. Ivanovskii “Magnetic effects induced by sp impurities and defects in nonmagnetic sp materialsPhys. Usp. 50 1031–1052 (2007)
  17. Ch.B. Lushchik, I.K. Vitol, M.A. Élango “Decay of electronic excitations into radiation defects in ionic crystalsSov. Phys. Usp. 20 489–505 (1977)
  18. A.V. Galeeva, A.S. Kazakov, D.R. Khokhlov “Terahertz probing of topological insulators: photoelectric effectsPhys. Usp. 67 988–999 (2024)
  19. B.N. Mukashev, Kh.A. Abdullin, Yu.V. Gorelkinskii “Metastable and bistable defects in siliconPhys. Usp. 43 139–150 (2000)
  20. G.N. Chuev “Statistical physics of the solvated electronPhys. Usp. 42 149 (1999)

The list is formed automatically.

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions