Mixed-valence impurities in lead telluride-based solid solutions

B.A. Volkov^a, L.I. Ryabova^b, D.R. Khokhlov^c
^aLebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation
^bDepartment of Chemistry, M.V. Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992, Russian Federation
^cLomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation

Experimental data on impurity states in narrow-gap lead telluride based semiconductors are summarized. Theoretical models describing the nontrivial properties of such states are presented. Applications to the design of highly sensitive far-infrared detectors are considered.

PACS: 71.23.An, 71.55.−i, 85.60.Gz (all)
DOI: 10.1070/PU2002v045n08ABEH001146
URL: https://ufn.ru/en/articles/2002/8/b/
Web of Science

000179657600002
Citation: Volkov B A, Ryabova L I, Khokhlov D R "Mixed-valence impurities in lead telluride-based solid solutions" Phys. Usp. 45 819–846 (2002)

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Оригинал: Волков Б А, Рябова Л И, Хохлов Д Р «Примеси с переменной валентностью в твердых растворах на основе теллурида свинца» УФН 172 875–906 (2002); DOI: 10.3367/UFNr.0172.200208b.0875

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