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Mixed-valence impurities in lead telluride-based solid solutionsa Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation b Department of Chemistry, M.V. Lomonosov Moscow State University, Leninskie Gory, Moscow, 119992, Russian Federation c Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation Experimental data on impurity states in narrow-gap lead telluride based semiconductors are summarized. Theoretical models describing the nontrivial properties of such states are presented. Applications to the design of highly sensitive far-infrared detectors are considered.
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