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Issue 12, 2024
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Quantum dot Ge/Si heterostructures

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Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
Fulltext pdf (167 KB)
Fulltext is also available at DOI: 10.1070/PU2001v044n12ABEH001057
PACS: 73.61.−r, 85.30.Vw, 85.30.Tv (all)
DOI: 10.1070/PU2001v044n12ABEH001057
URL: https://ufn.ru/en/articles/2001/12/h/
000174927700008
Citation: Dvurechenskii A V, Yakimov A I "Quantum dot Ge/Si heterostructures" Phys. Usp. 44 1304–1307 (2001)
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Оригинал: Двуреченский А В, Якимов А И «Гетероструктуры Ge/Si с квантовыми точками» УФН 171 1371–1373 (2001); DOI: 10.3367/UFNr.0171.200112h.1371

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