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Quantum dot Ge/Si heterostructures

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Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
Fulltext pdf (160 KB)
Fulltext is also available at DOI: 10.1070/PU2001v044n12ABEH001057
PACS: 73.61.−r, 85.30.Vw, 85.30.Tv (all)
DOI: 10.1070/PU2001v044n12ABEH001057
URL: https://ufn.ru/en/articles/2001/12/h/
000174927700008
Citation: Dvurechenskii A V, Yakimov A I "Quantum dot Ge/Si heterostructures" Phys. Usp. 44 1304–1307 (2001)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
@article{Dvurechenskii:2001,
	author = {A. V. Dvurechenskii and A. I. Yakimov},
	title = {Quantum dot Ge/Si heterostructures},
	publisher = {Physics-Uspekhi},
	year = {2001},
	journal = {Phys. Usp.},
	volume = {44},
	number = {12},
	pages = {1304-1307},
	url = {https://ufn.ru/en/articles/2001/12/h/},
	doi = {10.1070/PU2001v044n12ABEH001057}
}

Оригинал: Двуреченский А В, Якимов А И «Гетероструктуры Ge/Si с квантовыми точками» УФН 171 1371–1373 (2001); DOI: 10.3367/UFNr.0171.200112h.1371

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