Quantum dot Ge/Si heterostructures

A.V. Dvurechenskii, A.I. Yakimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

PACS: 73.61.−r, 85.30.Vw, 85.30.Tv (all)
DOI: 10.1070/PU2001v044n12ABEH001057
URL: https://ufn.ru/en/articles/2001/12/h/
Web of Science

000174927700008
Citation: Dvurechenskii A V, Yakimov A I "Quantum dot Ge/Si heterostructures" Phys. Usp. 44 1304–1307 (2001)

BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

@article{Dvurechenskii:2001,
	author = {A. V. Dvurechenskii and A. I. Yakimov},
	title = {Quantum dot Ge/Si heterostructures},
	publisher = {Physics-Uspekhi},
	year = {2001},
	journal = {Phys. Usp.},
	volume = {44},
	number = {12},
	pages = {1304-1307},
	url = {https://ufn.ru/en/articles/2001/12/h/},
	doi = {10.1070/PU2001v044n12ABEH001057}
}

Оригинал: Двуреченский А В, Якимов А И «Гетероструктуры Ge/Si с квантовыми точками» УФН 171 1371–1373 (2001); DOI: 10.3367/UFNr.0171.200112h.1371