Anatolii V. Dvurechenskii



Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences
Address: prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation


Articles

  1. E.E. Vdovin, Yu.N. Khanin, Yu.V. Dubrovskii et alScientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (30 May 2001)44 1299–1301 (2001)
  2. A.V. Dvurechenskii, A.I. Yakimov “Quantum dot Ge/Si heterostructures44 1304–1307 (2001)

See also: A.I. Yakimov, Yu.E. Lozovik, M. Henini, G. Hill, A.V. Subashiev, P.C. Main, E.E. Vdovin, L. Eaves, Yu.V. Dubrovskii, Yu.N. Khanin, A. Veretennikov, A. Levin, A. Patane, J.C. Maan, E.E. Takhtamirov

PACS: 85.30.Tv, 85.30.Vw, 73.61.-r, 71.35.Ji, 71.35.Lk, 29.25.Bx, 29.27.Hj, 79.60.Jv, 03.75.Fi, 73.40.Gk, 71.55.Eq, 71.45.Gm, 73.20.Mf, 71.24.+q, 73.61.Ey,

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