Quantum dot Ge/Si heterostructures

A.V. Dvurechenskii, A.I. Yakimov
Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation

PACS: 73.61.−r, 85.30.Vw, 85.30.Tv (all)
DOI: 10.1070/PU2001v044n12ABEH001057
URL: https://ufn.ru/en/articles/2001/12/h/
Web of Science

000174927700008
Citation: Dvurechenskii A V, Yakimov A I "Quantum dot Ge/Si heterostructures" Phys. Usp. 44 1304–1307 (2001)

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RT Journal
T1 Quantum dot Ge/Si heterostructures
A1 Dvurechenskii,A.V.
A1 Yakimov,A.I.
PB Physics-Uspekhi
PY 2001
FD 10 Dec, 2001
JF Physics-Uspekhi
JO Phys. Usp.
VO 44
IS 12
SP 1304-1307
DO 10.1070/PU2001v044n12ABEH001057
LK https://ufn.ru/en/articles/2001/12/h/

Оригинал: Двуреченский А В, Якимов А И «Гетероструктуры Ge/Si с квантовыми точками» УФН 171 1371–1373 (2001); DOI: 10.3367/UFNr.0171.200112h.1371