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Quantum dot Ge/Si heterostructures

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Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
Fulltext pdf (167 KB)
Fulltext is also available at DOI: 10.1070/PU2001v044n12ABEH001057
PACS: 73.61.−r, 85.30.Vw, 85.30.Tv (all)
DOI: 10.1070/PU2001v044n12ABEH001057
URL: https://ufn.ru/en/articles/2001/12/h/
000174927700008
Citation: Dvurechenskii A V, Yakimov A I "Quantum dot Ge/Si heterostructures" Phys. Usp. 44 1304–1307 (2001)
BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks
RT Journal
T1 Quantum dot Ge/Si heterostructures
A1 Dvurechenskii,A.V.
A1 Yakimov,A.I.
PB Physics-Uspekhi
PY 2001
FD 10 Dec, 2001
JF Physics-Uspekhi
JO Phys. Usp.
VO 44
IS 12
SP 1304-1307
DO 10.1070/PU2001v044n12ABEH001057
LK https://ufn.ru/en/articles/2001/12/h/

Оригинал: Двуреченский А В, Якимов А И «Гетероструктуры Ge/Si с квантовыми точками» УФН 171 1371–1373 (2001); DOI: 10.3367/UFNr.0171.200112h.1371

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