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Quantum dot Ge/Si heterostructures

Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation
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Fulltext is also available at DOI: 10.1070/PU2001v044n12ABEH001057
PACS: 73.61.−r, 85.30.Vw, 85.30.Tv (all)
DOI: 10.1070/PU2001v044n12ABEH001057
Citation: Dvurechenskii A V, Yakimov A I "Quantum dot Ge/Si heterostructures" Phys. Usp. 44 1304–1307 (2001)
BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks
PT Journal Article
TI Quantum dot Ge/Si heterostructures
AU Dvurechenskii A V
FAU Dvurechenskii AV
AU Yakimov A I
FAU Yakimov AI
DP 10 Dec, 2001
TA Phys. Usp.
VI 44
IP 12
PG 1304-1307
RX 10.1070/PU2001v044n12ABEH001057
SO Phys. Usp. 2001 Dec 10;44(12):1304-1307

Оригинал: Двуреченский А В, Якимов А И «Гетероструктуры Ge/Si с квантовыми точками» УФН 171 1371–1373 (2001); DOI: 10.3367/UFNr.0171.200112h.1371

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