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Scientific session of the Division of General Physics and Astronomy of the Russian Academy of Sciences (30 May 2001)a Institute of Problems of Microelectronic Technology, Russian Academy of Sciences, Moscow region, Chernogolovka, Russian Federation b Osipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation c School of Physics and Astronomy, The University of Nottingham, University Park, NG7 2RD, Nottingham, United Kingdom d Department of Physics, University of Nottingham, Nottingham, UK e Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, S1 3JD, Sheffield, United Kingdom f Institute of Radio Engineering and Electronics, Russian Academy of Sciences, ul. Mokhovaya 11, Moscow, 125009, Russian Federation g High Magnetic Fields Laboratory, Grenoble, France h High Field Magnet Laboratory, Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED, Nijmegen, The Netherlands i Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, prosp. Akad. Lavrenteva 13, Novosibirsk, 630090, Russian Federation j Institute of Spectroscopy, Russian Academy of Sciences, ul. Fizicheskaya 5, Troitsk, Moscow, 108840, Russian Federation k St. Petersburg State Technical University, Politekhnicheskaya str. 29, St. Petersburg, 195251, Russian Federation
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