Tunneling spectroscopy of the localized states of individual impurity atoms on a semiconductor surface

N.S. Maslova, V.I. Panov, S.V. Savinov
Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation

PACS: 61.16.Ch, 68.35.−p, 78.50.-w
DOI: 10.1070/PU2000v043n05ABEH000756
URL: https://ufn.ru/en/articles/2000/5/j/
Web of Science

000165080500009
Citation: Maslova N S, Panov V I, Savinov S V "Tunneling spectroscopy of the localized states of individual impurity atoms on a semiconductor surface" Phys. Usp. 43 531–533 (2000)

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TY JOUR
TI Tunneling spectroscopy of the localized states of individual impurity atoms on a semiconductor surface
AU Maslova, N. S.
AU Panov, V. I.
AU Savinov, S. V.
PB Physics-Uspekhi
PY 2000
JO Physics-Uspekhi
JF Physics-Uspekhi
JA Phys. Usp.
VL 43
IS 5
SP 531-533
UR https://ufn.ru/en/articles/2000/5/j/
ER https://doi.org/10.1070/PU2000v043n05ABEH000756

Оригинал: Маслова Н С, Панов В И, Савинов С В «Туннельная спектроскопия локализованных состояний единичных примесных атомов на поверхности полупроводников» УФН 170 575–578 (2000); DOI: 10.3367/UFNr.0170.200005j.0575