Tunneling spectroscopy of the localized states of individual impurity atoms on a semiconductor surface

N.S. Maslova, V.I. Panov, S.V. Savinov
Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation

PACS: 61.16.Ch, 68.35.−p, 78.50.-w
DOI: 10.1070/PU2000v043n05ABEH000756
URL: https://ufn.ru/en/articles/2000/5/j/
Web of Science

000165080500009
Citation: Maslova N S, Panov V I, Savinov S V "Tunneling spectroscopy of the localized states of individual impurity atoms on a semiconductor surface" Phys. Usp. 43 531–533 (2000)

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RT Journal
T1 Tunneling spectroscopy of the localized states of individual impurity atoms on a semiconductor surface
A1 Maslova,N.S.
A1 Panov,V.I.
A1 Savinov,S.V.
PB Physics-Uspekhi
PY 2000
FD 10 May, 2000
JF Physics-Uspekhi
JO Phys. Usp.
VO 43
IS 5
SP 531-533
DO 10.1070/PU2000v043n05ABEH000756
LK https://ufn.ru/en/articles/2000/5/j/

Оригинал: Маслова Н С, Панов В И, Савинов С В «Туннельная спектроскопия локализованных состояний единичных примесных атомов на поверхности полупроводников» УФН 170 575–578 (2000); DOI: 10.3367/UFNr.0170.200005j.0575