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Tunneling spectroscopy of the localized states of individual impurity atoms on a semiconductor surface

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Lomonosov Moscow State University, Faculty of Physics, Leninskie Gory 1 build. 2, Moscow, 119991, Russian Federation
Fulltext pdf (276 KB)
Fulltext is also available at DOI: 10.1070/PU2000v043n05ABEH000756
PACS: 61.16.Ch, 68.35.−p, 78.50.-w
DOI: 10.1070/PU2000v043n05ABEH000756
URL: https://ufn.ru/en/articles/2000/5/j/
000165080500009
Citation: Maslova N S, Panov V I, Savinov S V "Tunneling spectroscopy of the localized states of individual impurity atoms on a semiconductor surface" Phys. Usp. 43 531–533 (2000)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks
@article{Maslova:2000,
	author = {N. S. Maslova and V. I. Panov and S. V. Savinov},
	title = {Tunneling spectroscopy of the localized states of individual impurity atoms on a semiconductor surface},
	publisher = {Physics-Uspekhi},
	year = {2000},
	journal = {Phys. Usp.},
	volume = {43},
	number = {5},
	pages = {531-533},
	url = {https://ufn.ru/en/articles/2000/5/j/},
	doi = {10.1070/PU2000v043n05ABEH000756}
}

Оригинал: Маслова Н С, Панов В И, Савинов С В «Туннельная спектроскопия локализованных состояний единичных примесных атомов на поверхности полупроводников» УФН 170 575–578 (2000); DOI: 10.3367/UFNr.0170.200005j.0575

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