Optical properties of strained Si1–xGex and Si1–x–yGexCy heterostructures

Z.F. Krasil’nik, A.V. Novikov
Institute of Microstructure Physics, Russian Academy of Sciences, ul. Ulyanova 46, Nizhnii Novgorod, 603600, Russian Federation

PACS: 79.60.Jv, 85.30.Vw, 85.60.−q (all)
DOI: 10.1070/PU2000v043n03ABEH000703
URL: https://ufn.ru/en/articles/2000/3/i/
Web of Science

000087162100014
Citation: Krasil’nik Z F, Novikov A V "Optical properties of strained Si_1-xGe_x and Si_1-x-yGe_xC_y heterostructures" Phys. Usp. 43 295–298 (2000)

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Оригинал: Красильник З Ф, Новиков А В «Оптические свойства напряженных гетероструктур на основе Si_1-xGe_x и Si_1-x-yGe_xC_y» УФН 170 338–341 (2000); DOI: 10.3367/UFNr.0170.200003n.0338

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. Yakovlev D R et al., in Nanostructures: Physics and Technology (Seventh Int. Symp., St. Petersburg, Russia, 1999, St. Petersburg, 1999) p. 393
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. Kochereshko V P et al., in Proc. of 23th Int. Conf. on the Physics of Semiconductors (Berlin, Germany, 1996) p. 1943
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Optical properties of strained Si1-xGex and Si1-x-yGexCy heterostructures

Optical properties of strained Si_1-xGe_x and Si_1-x-yGe_xC_y heterostructures