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Issue 4, 2024
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2000

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Optical properties of strained Si1-xGex and Si1-x-yGexCy heterostructures

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Institute of Microstructure Physics, Russian Academy of Sciences, ul. Ulyanova 46, Nizhnii Novgorod, 603600, Russian Federation
Fulltext pdf (226 KB)
Fulltext is also available at DOI: 10.1070/PU2000v043n03ABEH000703
PACS: 79.60.Jv, 85.30.Vw, 85.60.−q (all)
DOI: 10.1070/PU2000v043n03ABEH000703
URL: https://ufn.ru/en/articles/2000/3/i/
000087162100014
Citation: Krasil’nik Z F, Novikov A V "Optical properties of strained Si1-xGex and Si1-x-yGexCy heterostructures" Phys. Usp. 43 295–298 (2000)
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Оригинал: Красильник З Ф, Новиков А В «Оптические свойства напряженных гетероструктур на основе Si1-xGex и Si1-x-yGexCy» УФН 170 338–341 (2000); DOI: 10.3367/UFNr.0170.200003n.0338

References (8) Cited by (5) ↓ Similar articles (20)

  1. Ponomaryov S S, Yukhymchuk V O et al Nanoscale Res Lett 11 (1) (2016)
  2. Filatov D O, Kruglova M V et al Inorg Mater 44 1157 (2008)
  3. Filatov D O, Kruglova M V et al Bull. Russ. Acad. Sci. Phys. 72 249 (2008)
  4. Filatov D O, Kruglova M V et al Semiconductors 42 (9) (2008)
  5. Deibuk V G, Korolyuk Yu G Semiconductors 35 283 (2001)
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