Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered.

PACS: 61.72.−y, 61.72.Tt, 61.80.−x, 71.55.−i (all) DOI: 10.1070/PU2000v043n02ABEH000649 URL: https://ufn.ru/en/articles/2000/2/b/ 000086092900002 Citation: Mukashev B N, Abdullin Kh A, Gorelkinskii Yu V "Metastable and bistable defects in silicon" Phys. Usp. 43 139–150 (2000) BibTexBibNote ® (generic)BibNote ® (RIS)Medline RefWorks RT Journal T1 Metastable and bistable defects in silicon A1 Mukashev,B.N. A1 Abdullin,Kh.A. A1 Gorelkinskii,Yu.V. PB Physics-Uspekhi PY 2000 FD 10 Feb, 2000 JF Physics-Uspekhi JO Phys. Usp. VO 43 IS 2 SP 139-150 DO 10.1070/PU2000v043n02ABEH000649 LK https://ufn.ru/en/articles/2000/2/b/ Оригинал: Мукашев Б Н, Абдуллин Х А, Горелкинский Ю В «Метастабильные и бистабильные дефекты в кремнии» УФН 170 143–155 (2000); DOI: 10.3367/UFNr.0170.200002b.0143