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Reviews of topical problems


Metastable and bistable defects in silicon

, ,
Institute of Physics and Technology, Almaty, Kazakhstan

Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered.

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Fulltext is also available at DOI: 10.1070/PU2000v043n02ABEH000649
PACS: 61.72.−y, 61.72.Tt, 61.80.−x, 71.55.−i (all)
DOI: 10.1070/PU2000v043n02ABEH000649
URL: https://ufn.ru/en/articles/2000/2/b/
000086092900002
Citation: Mukashev B N, Abdullin Kh A, Gorelkinskii Yu V "Metastable and bistable defects in silicon" Phys. Usp. 43 139–150 (2000)
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Оригинал: Мукашев Б Н, Абдуллин Х А, Горелкинский Ю В «Метастабильные и бистабильные дефекты в кремнии» УФН 170 143–155 (2000); DOI: 10.3367/UFNr.0170.200002b.0143

References (104) Cited by (45) ↓ Similar articles (20)

  1. Pelenitsyn V, Korotaev P Computational Materials Science 244 113226 (2024)
  2. Slobodzyan D, Kushlyk M et al Materials 15 (12) 4052 (2022)
  3. Pavlov Je, Ceponis T et al Materials 15 (5) 1861 (2022)
  4. Besleaga C, Kuncser A et al Nuclear Instruments And Methods In Physics Research Section A: Accelerators, Spectrometers, Detectors And Associated Equipment 1017 165809 (2021)
  5. Olikh Ya, Tymochko M, Olikh O Journal Of Elec Materi 49 (8) 4524 (2020)
  6. Momida H, Ohno T Applied Physics Letters 117 (10) (2020)
  7. Coutinho J, Markevich V P, Peaker A R J. Phys.: Condens. Matter 32 (32) 323001 (2020)
  8. Le Roch A, Virmontois C et al IEEE Trans. Nucl. Sci. 67 (7) 1241 (2020)
  9. Gajc M, Surma H B, Pawlak D A Sci Rep 8 (1) (2018)
  10. Olikh O Ya, Gorb A M et al Journal Of Applied Physics 123 (16) 161573 (2018)
  11. Olikh Ya M Optoelektron. Napìvprovìd. Teh. 53 199 (2018)
  12. Lastovskii S B, Markevich V P et al Semiconductors 50 (6) 751 (2016)
  13. Kukushkin S A, Osipov A V, Telyatnik R S Phys. Solid State 58 (5) 971 (2016)
  14. Grekhov I V, Kostina L S et al Tech. Phys. Lett. 40 (12) 1069 (2014)
  15. Yeritsyan H N, Harutunyan V V et al JMP 04 (02) 180 (2013)
  16. Khirunenko L I, Pomozov Yu V, Sosnin M G Semiconductors 47 (2) 269 (2013)
  17. Yeritsyan H N, Sahakyan A A et al JMP 03 (05) 383 (2012)
  18. Olikh Ya M, Tymochko M D Tech. Phys. Lett. 37 (1) 37 (2011)
  19. Shmelev E I, Klyuev A V, Yakimov A V 2011 21st International Conference on Noise and Fluctuations, (2011) p. 176
  20. Bagraev N T, Mashkov V A et al JMP 02 (06) 544 (2011)
  21. Makhkamov Sh, Tursunov N A et al Russ Phys J 53 (5) 499 (2010)
  22. Karazhanov S Zh, Nærland T U et al MRS Proc. 1210 (2009)
  23. Babych V M Semicond. Phys. Quantum Electron. Optoelectron. 12 (4) 375 (2009)
  24. Pokotilo Yu M, Petukh A N et al Inorg Mater 45 (11) 1205 (2009)
  25. Pokotilo Yu M, Petukh A N, Dzichkovski O A Semiconductors 42 (7) 873 (2008)
  26. Nikitina A G, Zuev V V Semiconductors 42 (2) 142 (2008)
  27. Pokotilo Yu M, Petukh A N et al Tech. Phys. Lett. 34 (6) 498 (2008)
  28. Khirunenko L I, Sosnin M G et al Phys. Rev. B 78 (15) (2008)
  29. Poklonski N A, Vyrko S A, Zabrodskii A G Semiconductors 42 (12) 1388 (2008)
  30. Hopkinson G R, Goiffon V, Mohammadzadeh A IEEE Trans. Nucl. Sci. 55 (4) 2197 (2008)
  31. Babych V M, Dolgolenko A P et al Nucl. Phys. At. Energy 8 (1) 95 (2007)
  32. Hopkinson G R, Goiffon V, Mohammadzadeh A 2007 9th European Conference on Radiation and Its Effects on Components and Systems, (2007) p. 1
  33. Makarenko L F, Moll M et al Journal of Applied Physics 101 (11) (2007)
  34. Dovganyuk V V Semicond. Phys. Quantum Electron. Optoelectron. 9 (2) 95 (2006)
  35. Pokotilo Yu M, Petukh A N et al SSP 108-109 229 (2005)
  36. Khirunenko L I, Pomozov Yu V et al SSP 108-109 261 (2005)
  37. Pokotilo Yu M, Petukh A N et al Semiconductors 39 (7) 768 (2005)
  38. KOZLOVSKI V, ABROSIMOVA V Int. J. Hi. Spe. Ele. Syst. 15 (01) 1 (2005)
  39. Pichler P Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon Computational Microelectronics Chapter 4 (2004) p. 281
  40. Pokotilo Yu M, Petukh A N, Litvinov V V Tech. Phys. Lett. 30 (11) 962 (2004)
  41. Janavičius A J, Norgėla Ž, Purlys R Acta Phys. Pol. A 104 (5) 459 (2003)
  42. Pokotilo Yu M, Petukh A N, Litvinov V V Tech. Phys. Lett. 29 (10) 804 (2003)
  43. Davidyuk G E, Oksyuta V A, Manzhara V S Phys. Solid State 44 (2) 255 (2002)
  44. Kozlov V A, Kozlovski V V Semiconductors 35 (7) 735 (2001)
  45. Abdullin Kh A, Gorelkinskii Yu V, Mukashev B N Physica B: Condensed Matter 308-310 178 (2001)
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