Metastable and bistable defects in silicon

Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered.

PACS: 61.72.−y, 61.72.Tt, 61.80.−x, 71.55.−i (all)
DOI: 10.1070/PU2000v043n02ABEH000649
URL: https://ufn.ru/en/articles/2000/2/b/
Web of Science

000086092900002
Citation: Mukashev B N, Abdullin Kh A, Gorelkinskii Yu V "Metastable and bistable defects in silicon" Phys. Usp. 43 139–150 (2000)

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Оригинал: Мукашев Б Н, Абдуллин Х А, Горелкинский Ю В «Метастабильные и бистабильные дефекты в кремнии» УФН 170 143–155 (2000); DOI: 10.3367/UFNr.0170.200002b.0143

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Lastovskii S B, Markevich V P et al Semiconductors 50 751 (2016)
Grekhov I V, Kostina L S et al Tech. Phys. Lett. 40 1069 (2014)
Yeritsyan H N, Harutunyan V V et al JMP 04 180 (2013)
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Yeritsyan H N, Sahakyan A A et al JMP 03 383 (2012)
Shmelev E I, Klyuev A V, Yakimov A V 2011 21st International Conference on Noise and Fluctuations, (2011) p. 176
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Bagraev N T, Mashkov V A et al JMP 02 544 (2011)
Makhkamov Sh, Tursunov N A et al Russ Phys J 53 499 (2010)
Pokotilo Yu M, Petukh A N et al Inorg Mater 45 1205 (2009)
Karazhanov S Zh, Nærland T U et al MRS Proc. 1210 (2009)
Babych V M Semicond. Phys. Quantum Electron. Optoelectron. 12 375 (2009)
Nikitina A G, Zuev V V Semiconductors 42 142 (2008)
Pokotilo Yu M, Petukh A N, Dzichkovski O A Semiconductors 42 873 (2008)
Hopkinson G R, Goiffon V, Mohammadzadeh A IEEE Trans. Nucl. Sci. 55 2197 (2008)
Khirunenko L I, Sosnin M G et al Phys. Rev. B 78 (15) (2008)
Pokotilo Yu M, Petukh A N et al Tech. Phys. Lett. 34 498 (2008)
Poklonski N A, Vyrko S A, Zabrodskii A G Semiconductors 42 1388 (2008)
Hopkinson G R, Goiffon V, Mohammadzadeh A 2007 9th European Conference on Radiation and Its Effects on Components and Systems, (2007) p. 1
Makarenko L F, Moll M et al 101 (11) (2007)
Dovganyuk V V Semicond. Phys. Quantum Electron. Optoelectron. 9 95 (2006)
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Khirunenko L I, Pomozov Yu V et al SSP 108-109 261 (2005)
Pokotilo Yu M, Petukh A N et al SSP 108-109 229 (2005)
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Pokotilo Yu M, Petukh A N, Litvinov V V Tech. Phys. Lett. 30 962 (2004)
Pokotilo Yu M, Petukh A N, Litvinov V V Tech. Phys. Lett. 29 804 (2003)
Davidyuk G E, Oksyuta V A, Manzhara V S Phys. Solid State 44 255 (2002)
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