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Nonlinear screening, and spin and cyclotron gaps in the 2D electron gas of GaAs/AlGaAs heterojunctions

 a,  a,  a,  b,  b,  c,  d
a Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
b Institut fur Angewandte Physik, Universitaet Hamburg, Hamburg, Germany
c Ludwig-Maximilians-Universitat, Munchen, Germany
d University of Glasgow, Glasgow, United Kingdom
PACS: 72.70.+m, 73.40.Hm, 73.50.Td (all)
DOI: 10.1070/PU1998v041n02ABEH000346
URL: https://ufn.ru/en/articles/1998/2/k/
Citation: Dolgopolov V T, Shashkin A A, Aristov A V, Schmerek D, Hansen W, Kotthaus J P, Halland M "Nonlinear screening, and spin and cyclotron gaps in the 2D electron gas of GaAs/AlGaAs heterojunctions" Phys. Usp. 41 138–141 (1998)
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Оригинал: Долгополов В Т, Шашкин А А, Аристов А В, Шмерек Д, Хансен В, Коттхаус Й П, Холланд М «Нелинейная экранировка, спиновая и циклотронная щели для двумерного электронного газа в GaAs/AlGaAs гетеропереходах» УФН 168 147–150 (1998); DOI: 10.3367/UFNr.0168.199802j.0147

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