Nonlinear screening, and spin and cyclotron gaps in the 2D electron gas of GaAs/AlGaAs heterojunctions

V.T. Dolgopolov^a, A.A. Shashkin^a, A.V. Aristov^a, D. Schmerek^b, W. Hansen^b, J.P. Kotthaus^c, M. Halland^d
^aOsipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
^bInstitut fur Angewandte Physik, Universitaet Hamburg, Hamburg, Germany
^cLudwig-Maximilians-Universitat, Munchen, Germany
^dUniversity of Glasgow, Glasgow, United Kingdom

PACS: 72.70.+m, 73.40.Hm, 73.50.Td (all)
DOI: 10.1070/PU1998v041n02ABEH000346
URL: https://ufn.ru/en/articles/1998/2/k/
Web of Science

000072729300010
Citation: Dolgopolov V T, Shashkin A A, Aristov A V, Schmerek D, Hansen W, Kotthaus J P, Halland M "Nonlinear screening, and spin and cyclotron gaps in the 2D electron gas of GaAs/AlGaAs heterojunctions" Phys. Usp. 41 138–141 (1998)

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Оригинал: Долгополов В Т, Шашкин А А, Аристов А В, Шмерек Д, Хансен В, Коттхаус Й П, Холланд М «Нелинейная экранировка, спиновая и циклотронная щели для двумерного электронного газа в GaAs/AlGaAs гетеропереходах» УФН 168 147–150 (1998); DOI: 10.3367/UFNr.0168.199802j.0147

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