Nonlinear screening, and spin and cyclotron gaps in the 2D electron gas of GaAs/AlGaAs heterojunctions
V.T. Dolgopolova,
A.A. Shashkina,
A.V. Aristova,
D. Schmerekb,
W. Hansenb,
J.P. Kotthausc,
M. Hallandd aOsipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation bInstitut fur Angewandte Physik, Universitaet Hamburg, Hamburg, Germany cLudwig-Maximilians-Universitat, Munchen, Germany dUniversity of Glasgow, Glasgow, United Kingdom
PACS:72.70.+m, 73.40.Hm, 73.50.Td (all) DOI:10.1070/PU1998v041n02ABEH000346 URL: https://ufn.ru/en/articles/1998/2/k/ 000072729300010 Citation: Dolgopolov V T, Shashkin A A, Aristov A V, Schmerek D, Hansen W, Kotthaus J P, Halland M "Nonlinear screening, and spin and cyclotron gaps in the 2D electron gas of GaAs/AlGaAs heterojunctions" Phys. Usp.41 138–141 (1998)
@article{Dolgopolov:1998,author = {V. T. Dolgopolov and A. A. Shashkin and A. V. Aristov and D. Schmerek and W. Hansen and J. P. Kotthaus and M. Halland},title = {Nonlinear screening, and spin and cyclotron gaps in the 2D electron gas of GaAs/AlGaAs heterojunctions},publisher = {Physics-Uspekhi},year = {1998},journal = {Phys. Usp.},volume = {41},number = {2},pages = {138-141},url = {https://ufn.ru/en/articles/1998/2/k/},doi = {10.1070/PU1998v041n02ABEH000346}}