Nonlinear screening, and spin and cyclotron gaps in the 2D electron gas of GaAs/AlGaAs heterojunctions
V.T. Dolgopolova,
A.A. Shashkina,
A.V. Aristova,
D. Schmerekb,
W. Hansenb,
J.P. Kotthausc,
M. Hallandd aOsipyan Institute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation bInstitut fur Angewandte Physik, Universitaet Hamburg, Hamburg, Germany cLudwig-Maximilians-Universitat, Munchen, Germany dUniversity of Glasgow, Glasgow, United Kingdom
PACS:72.70.+m, 73.40.Hm, 73.50.Td (all) DOI:10.1070/PU1998v041n02ABEH000346 URL: https://ufn.ru/en/articles/1998/2/k/ 000072729300010 Citation: Dolgopolov V T, Shashkin A A, Aristov A V, Schmerek D, Hansen W, Kotthaus J P, Halland M "Nonlinear screening, and spin and cyclotron gaps in the 2D electron gas of GaAs/AlGaAs heterojunctions" Phys. Usp.41 138–141 (1998)
RT Journal
T1 Nonlinear screening, and spin and cyclotron gaps in the 2D electron gas of GaAs/AlGaAs heterojunctions
A1 Dolgopolov,V.T.
A1 Shashkin,A.A.
A1 Aristov,A.V.
A1 Schmerek,D.
A1 Hansen,W.
A1 Kotthaus,J.P.
A1 Halland,M.
PB Physics-Uspekhi
PY 1998
FD 10 Feb, 1998
JF Physics-Uspekhi
JO Phys. Usp.
VO 41
IS 2
SP 138-141
DO 10.1070/PU1998v041n02ABEH000346
LK https://ufn.ru/en/articles/1998/2/k/