Tunnelling resonances in a single-barrier heterostructure

Yu.V. Dubrovskii^a, V.G. Popov^a, E.E. Vdovin^a, Yu.N. Khanin^a, I.A. Larkin^a, T.G. Andersson^b, J. Tordson^b, J.C. Portal^c, D.K. Maude^c
^aInstitute of Problems of Microelectronic Technology, Russian Academy of Sciences, Moscow region, Chernogolovka, Russian Federation
^bDepartment of Physics, Chalmers University of Technology, Gothenburg, Sweden
^cHigh Magnetic Fields Laboratory, Grenoble, France

PACS: 71.27.+a, 73.20.Dx
DOI: 10.1070/PU1996v039n08ABEH001533
URL: https://ufn.ru/en/articles/1996/8/g/
Citation: Dubrovskii Yu V, Popov V G, Vdovin E E, Khanin Yu N, Larkin I A, Andersson T G, Tordson J, Portal J C, Maude D K "Tunnelling resonances in a single-barrier heterostructure" Phys. Usp. 39 842–842 (1996)

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Оригинал: Дубровский Ю В, Попов В Г, Вдовин Е Е, Ханин Ю Н, Ларкин И А, Андерсон Т Г, Тордсон И В, Портал Дж С, Мауд Д К «Резонансы при туннелировании в гетероструктурах с одиночным барьером» УФН 166 900–900 (1996); DOI: 10.3367/UFNr.0166.199608g.0900

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