Conferences and symposia

Tunnelling resonances in a single-barrier heterostructure

 a,  a,  a,  a,  a,  b,  b,  c,  c
a Institute of Problems of Microelectronic Technology, Russian Academy of Sciences, Moscow region, Chernogolovka, Russian Federation
b Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
c High Magnetic Fields Laboratory, Grenoble, France
PACS: 71.27.+a, 73.20.Dx
DOI: 10.1070/PU1996v039n08ABEH001533
Citation: Dubrovskii Yu V, Popov V G, Vdovin E E, Khanin Yu N, Larkin I A, Andersson T G, Tordson J, Portal J C, Maude D K "Tunnelling resonances in a single-barrier heterostructure" Phys. Usp. 39 842–842 (1996)
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Оригинал: Дубровский Ю В, Попов В Г, Вдовин Е Е, Ханин Ю Н, Ларкин И А, Андерсон Т Г, Тордсон И В, Портал Дж С, Мауд Д К «Резонансы при туннелировании в гетероструктурах с одиночным барьером» УФН 166 900–900 (1996); DOI: 10.3367/UFNr.0166.199608g.0900

References (2) Similar articles (20) ↓

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