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Tunnelling resonances in a single-barrier heterostructure

 a,  a,  a,  a,  a,  b,  b,  c,  c
a Institute of Problems of Microelectronic Technology, Russian Academy of Sciences, Moscow region, Chernogolovka, Russian Federation
b Department of Physics, Chalmers University of Technology, Gothenburg, Sweden
c High Magnetic Fields Laboratory, Grenoble, France
PACS: 71.27.+a, 73.20.Dx
DOI: 10.1070/PU1996v039n08ABEH001533
URL: https://ufn.ru/en/articles/1996/8/g/
Citation: Dubrovskii Yu V, Popov V G, Vdovin E E, Khanin Yu N, Larkin I A, Andersson T G, Tordson J, Portal J C, Maude D K "Tunnelling resonances in a single-barrier heterostructure" Phys. Usp. 39 842–842 (1996)
BibTexBibNote ® (generic)BibNote ® (RIS) MedlineRefWorks
PT Journal Article
TI Tunnelling resonances in a single-barrier heterostructure
AU Dubrovskii Yu V
FAU Dubrovskii YV
AU Popov V G
FAU Popov VG
AU Vdovin E E
FAU Vdovin EE
AU Khanin Yu N
FAU Khanin YN
AU Larkin I A
FAU Larkin IA
AU Andersson T G
FAU Andersson TG
AU Tordson J
FAU Tordson J
AU Portal J C
FAU Portal JC
AU Maude D K
FAU Maude DK
DP 10 Aug, 1996
TA Phys. Usp.
VI 39
IP 8
PG 842-842
RX 10.1070/PU1996v039n08ABEH001533
URL https://ufn.ru/en/articles/1996/8/g/
SO Phys. Usp. 1996 Aug 10;39(8):842-842

Оригинал: Дубровский Ю В, Попов В Г, Вдовин Е Е, Ханин Ю Н, Ларкин И А, Андерсон Т Г, Тордсон И В, Портал Дж С, Мауд Д К «Резонансы при туннелировании в гетероструктурах с одиночным барьером» УФН 166 900–900 (1996); DOI: 10.3367/UFNr.0166.199608g.0900

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