New approaches to three-dimensional dislocation reconstruction in silicon from X-ray topo-tomography data
E.V. Suvorovc aFederal Scientific Research Center "Crystallography and Photonics", Russian Academy of Sciences, Leninskii prosp 59, Moscow, 119333, Russian Federation bNational Research Nuclear University ‘MEPhI’, Kashirskoe shosse 31, Moscow, 115409, Russian Federation cInstitute of Solid State Physics, Russian Academy of Sciences, Akademika Osip'yana str. 2, Chernogolovka, Moscow Region, 142432, Russian Federation
We present the results of processing the diffraction patterns of dislocation half-loops in Si(111) silicon single crystal, which were recorded by X-ray topo-tomography (XTT) at the European Synchrotron Radiation Facility (ESRF). An algorithm for preprocessing two-dimensional images by automatic noise filtering was proposed and solution reliability criteria were developed, which enabled a significant improvement in the quality of three-dimensional reconstruction of the spatial distribution of the defects under study. The experimental patterns were compared with those simulated numerically using the solution of Takagi equations. This approach made it possible not only to determine the geometry of the defects but also to derive information about the Burgers vector.
Keywords: synchrotron radiation, topo-tomography, dislocation half-loops, silicon single crystal, Takagi equations PACS:07.85.−m, 61.72.−y, 61.72.Bb (all) DOI:10.3367/UFNe.2022.05.039199 URL: https://ufn.ru/en/articles/2023/9/f/ Citation: Zolotov D A, Asadchikov V E, Buzmakov A V, Volkov V V, D’yachkova I G, Konarev P V, Grigorev V A, Suvorov E V "New approaches to three-dimensional dislocation reconstruction in silicon from X-ray topo-tomography data" Phys. Usp.66 943–950 (2023)