RSS feeds
РусскийEnglish
Issue 11, 2024
Volume year page
Issues Authors PACS Subscription For authors

Issues

 / 

1994

 / 

March

←  →

Reviews of topical problems


Physics and applications of wide bandgap semiconductors


Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

Wide bandgap semiconductors are electronic materials in which the energy of the band-to-band electronic transitions exceeds approximately 2 eV. These materials have different kinds of chemical bonds and of crystal lattice structures, but the electronic and optical processes taking place in them have a great deal in common. Diamond, silicon carbide SiC, gallium phosphide GaP, cadmium sulfide CdS, and some other related compounds of the AIIBVI type occupy a special place among the widegap semiconductors. Recent developments in optoelectronics and other fields of practical applications (in particular, high-temperature devices and methods of detecting photons and charged particles) have stimulated a wide interest in wide bandgap semiconductors. The data available for some of the most widely studied members of the very large family of wide bandgap semiconductors have been used to analyse the most characteristic properties of the processes taking place in these materials, and especially those induced by the strong excitation of their electronic subsystem and by the phenomena associated with the unavoidably present carrier localisation centres.

Fulltext pdf (487 KB)
Fulltext is also available at DOI: 10.1070/PU1994v037n03ABEH000012
PACS: 72.80.Ey, 78.20, 85.60.G
DOI: 10.1070/PU1994v037n03ABEH000012
URL: https://ufn.ru/en/articles/1994/3/c/
A1994NH30100003
Citation: Vavilov V S "Physics and applications of wide bandgap semiconductors" Phys. Usp. 37 269–277 (1994)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Вавилов В С «Особенности физики широкозонных полупроводников и их практических применений» УФН 164 287–296 (1994); DOI: 10.3367/UFNr.0164.199403c.0287

References (47) ↓ Cited by (40) Similar articles (20)

  1. Shockley W Proceedings of the Prague Conference on Semiconductor Physics: J. Phys. Chem. Sol. suppl. 1 (1961); Translated into Russian, Shockley W Usp. Fiz Nauk 77 161 (1962)
  2. Bonch-Bruevich V L, Kalashnikov S G Fizika Poluprovodnikov (Physics Of Semiconductors) (Moscow: Nauka, 1977); Bonch-Bruevich V L, Kalashnikov S G Fizika Poluprovodnikov (Physics Of Semiconductors) 2nd ed. (Moscow: Nauka, 1977)
  3. Milvidskii M G, Osvenskii V B Strukturnye Defecty V Monokristallakh Poluprovodnikov (Structural Defects In Semiconducting Single Crystals) (Moscow: Metallurgiya, 1984)
  4. Landolt-Börnstein Zahlenwerten Und Funktionen In Naturwissenschaften Und Technik. Neue Serie Vol. Band 17 (Ed. O Madelung); Landolt-Börnstein Halbleiter (Eds M Schulz, H Weiss) (Berlin: Springer, 1982)
  5. Landolt-Börnstein Fizika Soedinenii A2B6 (Physics Of A2B6 Compounds, Eds A N Georgobiani, M K Sheinkman) (Moscow: Nauka, 1986) p. 320
  6. Antonov-Romanovskii V V Kinetika Fotolyuminestsentsii Kristallofosforov (Kinetics Of Photoluminescence In Crystal Phosphors) (Moscow: Nauka, 1966) p. 324
  7. Queisser H Kristalline Krisen (München: Piper, 1985) p. 350
  8. Losev O V Te Legrafiya I Telefoniya (Telegraph And Telephone, (18)) 61 (1923); Losev O V Philos. Mag. 7 1024 (1928)
  9. Bergh A A, Dean P J Light Emitting Diodes (Oxford: Clarendon Press, 1976); Translated into Russian, Bergh A A, Dean P J Svetodiody Ed. A E Yunovich (Moscow: Mir, 1979) p. 686
  10. Vavilov V S, Kekelidze N P, Smirnov L S Deistvie Izluchenii Na Poluprovodniki (Radiation Effects In Semiconductors) (Moscow: Nauka, 1988)
  11. Basov N G, Krokhin O N, Popov Yu M Usp. Fiz. Nauk 72 ((2)) 161 (1960); Basov N G, Krokhin O N, Popov Yu M Sov. Phys. Usp. 3 ((5)) 702 (1960)
  12. Antoncik E Czech. Ψ As. Fis. 765 1 (1957)
  13. Broudy J, Muray J The Physics Of Microfabrication (New York, London: Plenum Press, 1982); Translated into Russian, Broudy J, Muray J Fizicheskie Osnovy Mikrotekhnologii (Ed. A V Shalnov) (Moscow: Mir, 1985) p. 494
  14. The Properties Of Natural And Synthetic Diamond (Ed. J Field) (London: Academic Press, 1992)
  15. Bernholz J et al Proceedings of the XX International Conference on Semiconductor Physics, Thessaloniki, Greece Vol. Vol. 1 (1990) p. 332
  16. Prins J Mater. Sci. Rep. 7 ((7-8)) 271 (1992)
  17. Vavilov V S Usp. Fiz. Nauk 164 ((4)) 429 (1994)
  18. van Roosbroeck W, Shockley W Phys. Rev. 94 1558 (1954)
  19. Modern Problems In Condensed Matter Sciences Vol. Vol. 16 (Amsterdam: North-Holland, 1986)
  20. Pankove J I Optical Processes in Semiconductors (Englewood Cliffs, N. J.: Prentice-Hall, 1971); Translated into Russian, Pankove J I Opticheskie Protsessy V Poluprovodnikakh (Eds Zh I Alferov, V S Vavilov) (Moscow: Mir, 1973)
  21. Galkin G N Tr. Fiz. Inst. Akad. Nauk SSSR 127 3 (1981), (based on Doctoral Thesis)
  22. Blinov L M, Vavilov V S, Galkin G N Fiz Tverdogo Tela 9 884 (1967); Blinov L M, Vavilov V S, Galkin G N Sov. Solid State Phys. (1967)
  23. Vavilov V S, Gippius A A, Konorova E A Elektronnye i Opticheskie Protsessy v Almaze (Electron and Optical Processes in Diamond) (Moscow: Nauka, 1985)
  24. Sheinkman M K and Korsunskaya N E in Ref. [5] ch. 4
  25. Beer K, Borchardt W Fortschr. Phys. 7 184 (1953)
  26. Osip’yan Yu A Savchenko in Ref [5] ch. 2
  27. "Defects in Semiconductors-16." Proceedings of the 16th Conference (Lehigh Univ. USA: Trans Tech Publications, 1991)
  28. Sakalas A, Janushkevichus Z Tochechnye Defekty V Poluprovodnikovykh Soedineniyakh (Point Defects In Semiconductor Compounds) (Vilnius: Mokslas, 1988) p. 155
  29. Ryvkin S M Fotoelektricheskie Yavleniya V Poluprovodnikakh (Photoelectric Phenomena In Semiconductors) (Moscow: Fizmatgiz, 1963)
  30. Gippius A A Doctoral Thesis Fiz. Inst. Akad. Nauk SSSR (Moscow: FIAN, 1985)
  31. Corbett J W, Bourgoin J-C Semiconductors and Molecular Crystals Point Defects In Solids Vol. Vol. 2: (Eds J H Crawford, Slifkin) (New York, London: Plenum Press, 1975); Translated into Russian, Corbett J W, Bourgoin J-C Tochechnye Defekty V Poluprovodnikakh (Eds B I Boltaks, T V Mashovets) (Moscow: Mir, 1979)
  32. Vavilov V S, Kiselev V F, Mukashev B N Defekty V Kremniiina Ego Poverkhnosti (Defects In The Bulk And At The Surface Of Silicon) (Moscow: Nauka, 1990)
  33. Gippius A A, Vavilov V S "Trudy VII Mezhdunarodnoi Konferentsii "Ionnaya Implantatsiya v Poluprovodnikakh", Vilnius, 1983" Proceedings of the VII International Conference "Ion Implantation in Semiconductors", Vilnius, 1983 (Vilnius: Vilnius State University, 1985) p. 59
  34. Seitz F Discuss. Faraday Soc. 5 271 (1949); Translated into Russian, Seitz F Deistvie Izluchenii Na Poluprovodniki (Radiation Effects In Semiconductors, Ed. S M Ryvkin) (Moscow: Inostr. Lit., 1954) p. 9
  35. Emtsev V V, Mashovets T B Primesii Tochechnye Defekty V Poluprovodnikakh (Impurities And Point Defects In Semiconductors) (Moscow: Radio i Svyaz, 1982)
  36. Vavilov V S, Kiv A E, Niyazova O R Mekhanizmy Obrazovaniya I Migratsii Defektov V Poluprovodnikakh (Mechanisms Of Defect Formation And Migration In Semiconductors) (Moscow: Nauka, 1981)
  37. Vodakov Yu A et al Fiz. Tekhn. Poluprovod. 26 ((11)) 1857 (1992)
  38. Cullis A, Canham L Nature (London) 353 335 (1991)
  39. Cullis A, Canham L, Dosser O MRS FallMeeting. Abstracts of Symposium A A (Boston) p. 4
  40. Kachalov M A et al "Rossiiskaya Konferentsiya po Fizike Poluprovodnikov, Nizhnii Novgorod, 1993, Tezisy Dokladov" All-Russia Conference on Semiconductor Physics, Nizhny Novgorod Vol. Vol. 2 (1993) p. 257, Abstracts
  41. Bassons E in Ref. [39] p. 4
  42. Petrova-Koch V et al in Ref. [40] p. 6
  43. Asnin V M, Stepanov V I in Ref. [39] p. 7
  44. Michel J, Kimmerling L et al in Ref. [39] p. 7
  45. Yassievich I N in Ref. [40] p. 9
  46. Fuchs H in Ref. [40] p. 12
  47. Vikulin J M, Stafeev V I Fizika Poluprovodnikovykh Priborov (Physics Of Semiconductor Devices) (Moscow: Radio i Svyaz, 1990)
© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions