Reviews of topical problems

Physics and applications of wide bandgap semiconductors

Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

Wide bandgap semiconductors are electronic materials in which the energy of the band-to-band electronic transitions exceeds approximately 2 eV. These materials have different kinds of chemical bonds and of crystal lattice structures, but the electronic and optical processes taking place in them have a great deal in common. Diamond, silicon carbide SiC, gallium phosphide GaP, cadmium sulfide CdS, and some other related compounds of the AIIBVI type occupy a special place among the widegap semiconductors. Recent developments in optoelectronics and other fields of practical applications (in particular, high-temperature devices and methods of detecting photons and charged particles) have stimulated a wide interest in wide bandgap semiconductors. The data available for some of the most widely studied members of the very large family of wide bandgap semiconductors have been used to analyse the most characteristic properties of the processes taking place in these materials, and especially those induced by the strong excitation of their electronic subsystem and by the phenomena associated with the unavoidably present carrier localisation centres.

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Fulltext is also available at DOI: 10.1070/PU1994v037n03ABEH000012
PACS: 72.80.Ey, 78.20, 85.60.G
DOI: 10.1070/PU1994v037n03ABEH000012
Citation: Vavilov V S "Physics and applications of wide bandgap semiconductors" Phys. Usp. 37 269–277 (1994)
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RT Journal
T1 Physics and applications of wide bandgap semiconductors
A1 Vavilov,V.S.
PB Physics-Uspekhi
PY 1994
FD 10 Mar, 1994
JF Physics-Uspekhi
JO Phys. Usp.
VO 37
IS 3
SP 269-277
DO 10.1070/PU1994v037n03ABEH000012

Оригинал: Вавилов В С «Особенности физики широкозонных полупроводников и их практических применений» УФН 164 287–296 (1994); DOI: 10.3367/UFNr.0164.199403c.0287

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