Issues

 / 

1994

 / 

March

  

Reviews of topical problems


Physics and applications of wide bandgap semiconductors


Lebedev Physical Institute, Russian Academy of Sciences, Leninsky prosp. 53, Moscow, 119991, Russian Federation

Wide bandgap semiconductors are electronic materials in which the energy of the band-to-band electronic transitions exceeds approximately 2 eV. These materials have different kinds of chemical bonds and of crystal lattice structures, but the electronic and optical processes taking place in them have a great deal in common. Diamond, silicon carbide SiC, gallium phosphide GaP, cadmium sulfide CdS, and some other related compounds of the AIIBVI type occupy a special place among the widegap semiconductors. Recent developments in optoelectronics and other fields of practical applications (in particular, high-temperature devices and methods of detecting photons and charged particles) have stimulated a wide interest in wide bandgap semiconductors. The data available for some of the most widely studied members of the very large family of wide bandgap semiconductors have been used to analyse the most characteristic properties of the processes taking place in these materials, and especially those induced by the strong excitation of their electronic subsystem and by the phenomena associated with the unavoidably present carrier localisation centres.

Fulltext pdf (487 KB)
Fulltext is also available at DOI: 10.1070/PU1994v037n03ABEH000012
PACS: 72.80.Ey, 78.20, 85.60.G
DOI: 10.1070/PU1994v037n03ABEH000012
URL: https://ufn.ru/en/articles/1994/3/c/
A1994NH30100003
Citation: Vavilov V S "Physics and applications of wide bandgap semiconductors" Phys. Usp. 37 269–277 (1994)
BibTexBibNote ® (generic)BibNote ® (RIS)MedlineRefWorks

Оригинал: Вавилов В С «Особенности физики широкозонных полупроводников и их практических применений» УФН 164 287–296 (1994); DOI: 10.3367/UFNr.0164.199403c.0287

References (47) Cited by (39) Similar articles (20) ↓

  1. V.S. Vavilov “Atomic migration and related changes in defect concentration and structure due to electronic subsystem excitations in semiconductors40 387–392 (1997)
  2. V.S. Vavilov “Diamond in solid state electronics40 15–20 (1997)
  3. V.Yu. Aristov “β-SiC(100) surface: atomic structures and electronic properties44 761–783 (2001)
  4. A.F. Volkov, Sh.M. Kogan “Physical phenomena in semiconductors with negative differential conductivity11 881–903 (1969)
  5. A.V. Eletskii, I.M. Iskandarova et alGraphene: fabrication methods and thermophysical properties54 227–258 (2011)
  6. I.M. Tsidil’kovskii “Crystallization of a three-dimensional electron gas30 676–698 (1987)
  7. L.A. Golovan, V.Yu. Timoshenko, P.K. Kashkarov “Optical properties of porous-system-based nanocomposites50 595–612 (2007)
  8. V.S. Vavilov “The nature and energy spectrum of radiation defects in semiconductors7 797–808 (1965)
  9. V.S. Vavilov “Radiative recombination in semiconductors2 455–464 (1959)
  10. V.S. Vavilov, E.A. Konorova “Semiconducting diamonds19 301–316 (1976)
  11. B.M. Smirnov “Processes in expanding and condensing gases37 621–657 (1994)
  12. V.P. Milant’ev “Cyclotron autoresonance and its applications40 1–14 (1997)
  13. V.N. Ageev, O.P. Burmistrova, Yu.A. Kuznetsov “Desorption stimulated by electronic excitations32 588–604 (1989)
  14. E.G. Berezhko, G.F. Krymskii “Acceleration of cosmic rays by shock waves31 27–51 (1988)
  15. B.L. Gel’mont, V.I. Ivanov-Omskii, I.M. Tsidil’kovskii “The electronic energy spectrum of zero-gap semiconductors19 879–893 (1976)
  16. A.P. Pyatakov, A.K. Zvezdin “Magnetoelectric and multiferroic media55 557–581 (2012)
  17. V.S. Barashenkov, A.S. Il’inov et alInteraction of particles and nuclei of high and ultrahigh energy with nuclei16 31–52 (1973)
  18. V.P. Ignatenko “Principles of formation and focusing of intense beams of charged particles4 96–115 (1961)
  19. S.V. Demishev, Yu.V. Kosichkin et alAmorphous semiconductors prepared by quenching under high pressure37 185–217 (1994)
  20. V.M. Biryukov, V.I. Kotov, Yu.A. Chesnokov “Steering of high-energy charged-particle beams by bent single crystals37 937–960 (1994)

The list is formed automatically.

© 1918–2024 Uspekhi Fizicheskikh Nauk
Email: ufn@ufn.ru Editorial office contacts About the journal Terms and conditions